DIFFUSION BARRIER FOR PtSi/Si STRUCTURES.

M. Eizenberg; J. W. Mayer; K. N. Tu

DIFFUSION BARRIER FOR PtSi/Si STRUCTURES.

M. Eizenberg
, J. W. Mayer
, K. N. Tu

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Abstract

Platinum silicide forms a high barrier height Schottky barrier diode to silicon, and aluminum is used as a low resistance metallization. During conventional heat treatment (sintering) of the Al/PtSi/Si structure at temperatures around 450 degree C, penetration of Al into PtSi occurs and, after a longer time, Al can penetrate into the interface between PtSi and Si. This reduces the barrier height. In order to overcome this problem, diffusion barriers, such as TiW, CrO//x, or TiN//x, are deposited between the PtSi layer and the Al layer.

Original language	English
Pages (from-to)	3708-3709
Journal	IBM technical disclosure bulletin
Volume	27
Issue number	7 A
Publication status	Published - Dec 1984
Externally published	Yes

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Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

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title = "DIFFUSION BARRIER FOR PtSi/Si STRUCTURES.",

abstract = "Platinum silicide forms a high barrier height Schottky barrier diode to silicon, and aluminum is used as a low resistance metallization. During conventional heat treatment (sintering) of the Al/PtSi/Si structure at temperatures around 450 degree C, penetration of Al into PtSi occurs and, after a longer time, Al can penetrate into the interface between PtSi and Si. This reduces the barrier height. In order to overcome this problem, diffusion barriers, such as TiW, CrO//x, or TiN//x, are deposited between the PtSi layer and the Al layer.",

author = "M. Eizenberg and Mayer, \{J. W.\} and Tu, \{K. N.\}",

note = "Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].",

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language = "English",

volume = "27",

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number = "7 A",

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TY - JOUR

T1 - DIFFUSION BARRIER FOR PtSi/Si STRUCTURES.

AU - Eizenberg, M.

AU - Mayer, J. W.

AU - Tu, K. N.

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 1984/12

Y1 - 1984/12

N2 - Platinum silicide forms a high barrier height Schottky barrier diode to silicon, and aluminum is used as a low resistance metallization. During conventional heat treatment (sintering) of the Al/PtSi/Si structure at temperatures around 450 degree C, penetration of Al into PtSi occurs and, after a longer time, Al can penetrate into the interface between PtSi and Si. This reduces the barrier height. In order to overcome this problem, diffusion barriers, such as TiW, CrO//x, or TiN//x, are deposited between the PtSi layer and the Al layer.

AB - Platinum silicide forms a high barrier height Schottky barrier diode to silicon, and aluminum is used as a low resistance metallization. During conventional heat treatment (sintering) of the Al/PtSi/Si structure at temperatures around 450 degree C, penetration of Al into PtSi occurs and, after a longer time, Al can penetrate into the interface between PtSi and Si. This reduces the barrier height. In order to overcome this problem, diffusion barriers, such as TiW, CrO//x, or TiN//x, are deposited between the PtSi layer and the Al layer.

UR - https://www.scopus.com/pages/publications/0021608288

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0021608288&origin=recordpage

M3 - RGC 21 - Publication in refereed journal

SN - 0018-8689

VL - 27

SP - 3708

EP - 3709

JO - IBM technical disclosure bulletin

JF - IBM technical disclosure bulletin

IS - 7 A

ER -

DIFFUSION BARRIER FOR PtSi/Si STRUCTURES.

Abstract

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