Difficulty involved to observe the surface smoothing effect of an amorphous High-k dielectric thin film deposited by atomic layer deposition on a metastable metal film

W.S. Lau; L. Du; H. Wong; S. Dong

doi:10.1109/CSTIC.2019.8755645

Difficulty involved to observe the surface smoothing effect of an amorphous High-k dielectric thin film deposited by atomic layer deposition on a metastable metal film

W.S. Lau^*, L. Du, H. Wong, S. Dong

^*Corresponding author for this work

Department of Electrical Engineering

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

3 Citations (Scopus)

Abstract

In this paper, convincing experimental data showing the surface smoothing effect of an amorphous high-k thin film deposited by atomic layer deposition (ALD) on a metastable metal film are provided even though there exist apparently contradictory data from atomic force microscopy (AFM).

Original language	English
Title of host publication	China Semiconductor Technology International Conference 2019 (CSTIC 2019)
Editors	Cor Claeys, Ru Huang, Hanming Wu, Qinghuang Lin, Steve Liang, Peilin Song, Zhen Guo, Kafai Lai, Ying Zhang, Xinping Qu, Hsiang-Lan Lung, Wenjian Yu
Publisher	IEEE
ISBN (Electronic)	9781538674437
DOIs	https://doi.org/10.1109/CSTIC.2019.8755645
Publication status	Published - Mar 2019
Event	China Semiconductor Technology International Conference (CSTIC) 2019 - Shanghai International Convention Center, Shanghai, China Duration: 18 Mar 2019 → 19 Mar 2019 https://www.semiconchina.org/en/989

Publication series

Name	China Semiconductor Technology International Conference, CSTIC

Conference

Conference	China Semiconductor Technology International Conference (CSTIC) 2019
Abbreviated title	CSTIC 2019
Place	China
City	Shanghai
Period	18/03/19 → 19/03/19
Internet address	https://www.semiconchina.org/en/989

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Lau, W. S., Du, L., Wong, H., & Dong, S. (2019). Difficulty involved to observe the surface smoothing effect of an amorphous High-k dielectric thin film deposited by atomic layer deposition on a metastable metal film. In C. Claeys, R. Huang, H. Wu, Q. Lin, S. Liang, P. Song, Z. Guo, K. Lai, Y. Zhang, X. Qu, H.-L. Lung, & W. Yu (Eds.), China Semiconductor Technology International Conference 2019 (CSTIC 2019) Article 8755645 (China Semiconductor Technology International Conference, CSTIC). IEEE. https://doi.org/10.1109/CSTIC.2019.8755645

Lau, W.S. ; Du, L. ; Wong, H. et al. / Difficulty involved to observe the surface smoothing effect of an amorphous High-k dielectric thin film deposited by atomic layer deposition on a metastable metal film. China Semiconductor Technology International Conference 2019 (CSTIC 2019). editor / Cor Claeys ; Ru Huang ; Hanming Wu ; Qinghuang Lin ; Steve Liang ; Peilin Song ; Zhen Guo ; Kafai Lai ; Ying Zhang ; Xinping Qu ; Hsiang-Lan Lung ; Wenjian Yu. IEEE, 2019. (China Semiconductor Technology International Conference, CSTIC).

@inproceedings{f5ec8008846a47a58cafd4016c2a632e,

title = "Difficulty involved to observe the surface smoothing effect of an amorphous High-k dielectric thin film deposited by atomic layer deposition on a metastable metal film",

abstract = "In this paper, convincing experimental data showing the surface smoothing effect of an amorphous high-k thin film deposited by atomic layer deposition (ALD) on a metastable metal film are provided even though there exist apparently contradictory data from atomic force microscopy (AFM).",

author = "W.S. Lau and L. Du and H. Wong and S. Dong",

year = "2019",

month = mar,

doi = "10.1109/CSTIC.2019.8755645",

language = "English",

series = "China Semiconductor Technology International Conference, CSTIC",

publisher = "IEEE",

editor = "Cor Claeys and Ru Huang and Hanming Wu and Qinghuang Lin and Steve Liang and Peilin Song and Zhen Guo and Kafai Lai and Ying Zhang and Xinping Qu and Hsiang-Lan Lung and Wenjian Yu",

booktitle = "China Semiconductor Technology International Conference 2019 (CSTIC 2019)",

address = "United States",

note = "China Semiconductor Technology International Conference (CSTIC) 2019, CSTIC 2019 ; Conference date: 18-03-2019 Through 19-03-2019",

url = "https://www.semiconchina.org/en/989",

}

Lau, WS, Du, L, Wong, H & Dong, S 2019, Difficulty involved to observe the surface smoothing effect of an amorphous High-k dielectric thin film deposited by atomic layer deposition on a metastable metal film. in C Claeys, R Huang, H Wu, Q Lin, S Liang, P Song, Z Guo, K Lai, Y Zhang, X Qu, H-L Lung & W Yu (eds), China Semiconductor Technology International Conference 2019 (CSTIC 2019)., 8755645, China Semiconductor Technology International Conference, CSTIC, IEEE, China Semiconductor Technology International Conference (CSTIC) 2019, Shanghai, China, 18/03/19. https://doi.org/10.1109/CSTIC.2019.8755645

Difficulty involved to observe the surface smoothing effect of an amorphous High-k dielectric thin film deposited by atomic layer deposition on a metastable metal film. / Lau, W.S.; Du, L.; Wong, H. et al.
China Semiconductor Technology International Conference 2019 (CSTIC 2019). ed. / Cor Claeys; Ru Huang; Hanming Wu; Qinghuang Lin; Steve Liang; Peilin Song; Zhen Guo; Kafai Lai; Ying Zhang; Xinping Qu; Hsiang-Lan Lung; Wenjian Yu. IEEE, 2019. 8755645 (China Semiconductor Technology International Conference, CSTIC).

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - Difficulty involved to observe the surface smoothing effect of an amorphous High-k dielectric thin film deposited by atomic layer deposition on a metastable metal film

AU - Lau, W.S.

AU - Du, L.

AU - Wong, H.

AU - Dong, S.

PY - 2019/3

Y1 - 2019/3

N2 - In this paper, convincing experimental data showing the surface smoothing effect of an amorphous high-k thin film deposited by atomic layer deposition (ALD) on a metastable metal film are provided even though there exist apparently contradictory data from atomic force microscopy (AFM).

AB - In this paper, convincing experimental data showing the surface smoothing effect of an amorphous high-k thin film deposited by atomic layer deposition (ALD) on a metastable metal film are provided even though there exist apparently contradictory data from atomic force microscopy (AFM).

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U2 - 10.1109/CSTIC.2019.8755645

DO - 10.1109/CSTIC.2019.8755645

M3 - RGC 32 - Refereed conference paper (with host publication)

T3 - China Semiconductor Technology International Conference, CSTIC

BT - China Semiconductor Technology International Conference 2019 (CSTIC 2019)

A2 - Claeys, Cor

A2 - Huang, Ru

A2 - Wu, Hanming

A2 - Lin, Qinghuang

A2 - Liang, Steve

A2 - Song, Peilin

A2 - Guo, Zhen

A2 - Lai, Kafai

A2 - Zhang, Ying

A2 - Qu, Xinping

A2 - Lung, Hsiang-Lan

A2 - Yu, Wenjian

PB - IEEE

T2 - China Semiconductor Technology International Conference (CSTIC) 2019

Y2 - 18 March 2019 through 19 March 2019

ER -

Lau WS, Du L, Wong H, Dong S. Difficulty involved to observe the surface smoothing effect of an amorphous High-k dielectric thin film deposited by atomic layer deposition on a metastable metal film. In Claeys C, Huang R, Wu H, Lin Q, Liang S, Song P, Guo Z, Lai K, Zhang Y, Qu X, Lung HL, Yu W, editors, China Semiconductor Technology International Conference 2019 (CSTIC 2019). IEEE. 2019. 8755645. (China Semiconductor Technology International Conference, CSTIC). doi: 10.1109/CSTIC.2019.8755645

Difficulty involved to observe the surface smoothing effect of an amorphous High-k dielectric thin film deposited by atomic layer deposition on a metastable metal film

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