Difficulty involved to observe the surface smoothing effect of an amorphous High-k dielectric thin film deposited by atomic layer deposition on a metastable metal film

Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45)32_Refereed conference paper (with ISBN/ISSN)peer-review

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Author(s)

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Detail(s)

Original languageEnglish
Title of host publicationChina Semiconductor Technology International Conference 2019 (CSTIC 2019)
EditorsCor Claeys, Ru Huang, Hanming Wu, Qinghuang Lin, Steve Liang, Peilin Song, Zhen Guo, Kafai Lai, Ying Zhang, Xinping Qu, Hsiang-Lan Lung, Wenjian Yu
PublisherIEEE
ISBN (Electronic)9781538674437
Publication statusPublished - Mar 2019

Publication series

NameChina Semiconductor Technology International Conference, CSTIC

Conference

TitleChina Semiconductor Technology International Conference (CSTIC) 2019
LocationShanghai International Convention Center
PlaceChina
CityShanghai
Period18 - 19 March 2019

Abstract

In this paper, convincing experimental data showing the surface smoothing effect of an amorphous high-k thin film deposited by atomic layer deposition (ALD) on a metastable metal film are provided even though there exist apparently contradictory data from atomic force microscopy (AFM).

Citation Format(s)

Difficulty involved to observe the surface smoothing effect of an amorphous High-k dielectric thin film deposited by atomic layer deposition on a metastable metal film. / Lau, W.S.; Du, L.; Wong, H.; Dong, S.

China Semiconductor Technology International Conference 2019 (CSTIC 2019). ed. / Cor Claeys; Ru Huang; Hanming Wu; Qinghuang Lin; Steve Liang; Peilin Song; Zhen Guo; Kafai Lai; Ying Zhang; Xinping Qu; Hsiang-Lan Lung; Wenjian Yu. IEEE, 2019. 8755645 (China Semiconductor Technology International Conference, CSTIC).

Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45)32_Refereed conference paper (with ISBN/ISSN)peer-review