Dielectric property and microstructure of a porous polymer material with ultralow dielectric constant

Yuhuan Xu; Yi-Pin Tsai; K. N. Tu; Bin Zhao; Q. Z. Liu; Maureen Brongo; George T. T. Sheng; C. H. Tung

doi:10.1063/1.124535

Dielectric property and microstructure of a porous polymer material with ultralow dielectric constant

Yuhuan Xu, Yi-Pin Tsai, K. N. Tu, Bin Zhao, Q. Z. Liu, Maureen Brongo, George T. T. Sheng, C. H. Tung

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

84 Citations (Scopus)

Abstract

This letter reports the synthesis and dielectric properties of a porous poly(arylethers) material with an ultralow dielectric constant for interlayer dielectric applications in microelectronics. The porous polymer films were fabricated by a method of organic phase separation and evaporation. A dielectric constant of 1.8 was achieved for a porous film with an estimated porosity of 40%. The characterization of microstucture for the porous film showed numerous nanopores with an average size of 3 nm distributed uniformly throughout the film. © 1999 American Institute of Physics.

Original language	English
Pages (from-to)	853-855
Journal	Applied Physics Letters
Volume	75
Issue number	6
DOIs	https://doi.org/10.1063/1.124535
Publication status	Published - 9 Aug 1999
Externally published	Yes

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Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

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abstract = "This letter reports the synthesis and dielectric properties of a porous poly(arylethers) material with an ultralow dielectric constant for interlayer dielectric applications in microelectronics. The porous polymer films were fabricated by a method of organic phase separation and evaporation. A dielectric constant of 1.8 was achieved for a porous film with an estimated porosity of 40%. The characterization of microstucture for the porous film showed numerous nanopores with an average size of 3 nm distributed uniformly throughout the film. {\textcopyright} 1999 American Institute of Physics.",

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AU - Xu, Yuhuan

AU - Tsai, Yi-Pin

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AU - Zhao, Bin

AU - Liu, Q. Z.

AU - Brongo, Maureen

AU - Sheng, George T. T.

AU - Tung, C. H.

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N2 - This letter reports the synthesis and dielectric properties of a porous poly(arylethers) material with an ultralow dielectric constant for interlayer dielectric applications in microelectronics. The porous polymer films were fabricated by a method of organic phase separation and evaporation. A dielectric constant of 1.8 was achieved for a porous film with an estimated porosity of 40%. The characterization of microstucture for the porous film showed numerous nanopores with an average size of 3 nm distributed uniformly throughout the film. © 1999 American Institute of Physics.

AB - This letter reports the synthesis and dielectric properties of a porous poly(arylethers) material with an ultralow dielectric constant for interlayer dielectric applications in microelectronics. The porous polymer films were fabricated by a method of organic phase separation and evaporation. A dielectric constant of 1.8 was achieved for a porous film with an estimated porosity of 40%. The characterization of microstucture for the porous film showed numerous nanopores with an average size of 3 nm distributed uniformly throughout the film. © 1999 American Institute of Physics.

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EP - 855

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

ER -

Dielectric property and microstructure of a porous polymer material with ultralow dielectric constant

Abstract

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