Dielectric properties of oriented PbZrO 3 thin films grown by sol-gel process

Jiwei Zhai; Y. Yao; X. Li; T. F. Hung; Z. K. Xu; Haydn Chen; Eugene V. Colla; T. B. Wu

doi:10.1063/1.1505981

Dielectric properties of oriented PbZrO ₃ thin films grown by sol-gel process

Jiwei Zhai
, Y. Yao
, X. Li
, T. F. Hung
, Z. K. Xu
, Haydn Chen
, Eugene V. Colla
, T. B. Wu

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

41 Citations (Scopus)

Abstract

Antiferroelectric PbZrO ₃ (PZ) films have been fabricated on LaNiO ₃/Pt/Ti/SiO ₂/Si substrates using a sol-gel process. The films with perovskite structure showed highly 〈001〉 preferred orientation. An antiferroelectric phase was identified by the presence of 1/4110 superlattice spots in a [001] selected area electron diffraction pattern. The field-induced antiferroelectric to ferroelectric phase switching was demonstrated at room temperature with full saturation and a maximum polarization of 40 μC/cm ². Dielectric properties were investigated as a function of both temperature and frequency. The presence of a conductive buffer layer of LaNiO ₃ on Pt/Ti/SiO ₂/Si substrate enabled the growth of high quality and highly oriented PZ antiferroelectric thin films that showed near zero remanent polarization and squared hysteresis loops. © 2002 American Institute of Physics.

Original language	English
Pages (from-to)	3990-3994
Journal	Journal of Applied Physics
Volume	92
Issue number	7
DOIs	https://doi.org/10.1063/1.1505981
Publication status	Published - 1 Oct 2002

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@article{e6e01132e3dc4f13a4df36195975a0c0,

title = "Dielectric properties of oriented PbZrO 3 thin films grown by sol-gel process",

abstract = "Antiferroelectric PbZrO 3 (PZ) films have been fabricated on LaNiO 3/Pt/Ti/SiO 2/Si substrates using a sol-gel process. The films with perovskite structure showed highly 〈001〉 preferred orientation. An antiferroelectric phase was identified by the presence of 1/4110 superlattice spots in a [001] selected area electron diffraction pattern. The field-induced antiferroelectric to ferroelectric phase switching was demonstrated at room temperature with full saturation and a maximum polarization of 40 μC/cm 2. Dielectric properties were investigated as a function of both temperature and frequency. The presence of a conductive buffer layer of LaNiO 3 on Pt/Ti/SiO 2/Si substrate enabled the growth of high quality and highly oriented PZ antiferroelectric thin films that showed near zero remanent polarization and squared hysteresis loops. {\textcopyright} 2002 American Institute of Physics.",

author = "Jiwei Zhai and Y. Yao and X. Li and Hung, \{T. F.\} and Xu, \{Z. K.\} and Haydn Chen and Colla, \{Eugene V.\} and Wu, \{T. B.\}",

year = "2002",

month = oct,

day = "1",

doi = "10.1063/1.1505981",

language = "English",

volume = "92",

pages = "3990--3994",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

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}

TY - JOUR

T1 - Dielectric properties of oriented PbZrO 3 thin films grown by sol-gel process

AU - Zhai, Jiwei

AU - Yao, Y.

AU - Li, X.

AU - Hung, T. F.

AU - Xu, Z. K.

AU - Chen, Haydn

AU - Colla, Eugene V.

AU - Wu, T. B.

PY - 2002/10/1

Y1 - 2002/10/1

N2 - Antiferroelectric PbZrO 3 (PZ) films have been fabricated on LaNiO 3/Pt/Ti/SiO 2/Si substrates using a sol-gel process. The films with perovskite structure showed highly 〈001〉 preferred orientation. An antiferroelectric phase was identified by the presence of 1/4110 superlattice spots in a [001] selected area electron diffraction pattern. The field-induced antiferroelectric to ferroelectric phase switching was demonstrated at room temperature with full saturation and a maximum polarization of 40 μC/cm 2. Dielectric properties were investigated as a function of both temperature and frequency. The presence of a conductive buffer layer of LaNiO 3 on Pt/Ti/SiO 2/Si substrate enabled the growth of high quality and highly oriented PZ antiferroelectric thin films that showed near zero remanent polarization and squared hysteresis loops. © 2002 American Institute of Physics.

AB - Antiferroelectric PbZrO 3 (PZ) films have been fabricated on LaNiO 3/Pt/Ti/SiO 2/Si substrates using a sol-gel process. The films with perovskite structure showed highly 〈001〉 preferred orientation. An antiferroelectric phase was identified by the presence of 1/4110 superlattice spots in a [001] selected area electron diffraction pattern. The field-induced antiferroelectric to ferroelectric phase switching was demonstrated at room temperature with full saturation and a maximum polarization of 40 μC/cm 2. Dielectric properties were investigated as a function of both temperature and frequency. The presence of a conductive buffer layer of LaNiO 3 on Pt/Ti/SiO 2/Si substrate enabled the growth of high quality and highly oriented PZ antiferroelectric thin films that showed near zero remanent polarization and squared hysteresis loops. © 2002 American Institute of Physics.

UR - https://www.scopus.com/pages/publications/18644384292

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-18644384292&origin=recordpage

U2 - 10.1063/1.1505981

DO - 10.1063/1.1505981

M3 - RGC 21 - Publication in refereed journal

SN - 0021-8979

VL - 92

SP - 3990

EP - 3994

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 7

ER -