Dielectric properties of heterostructured BZT thin films prepared by sol-gel technique

In this work, we used the low loss and non-hygroscopic MgTiO₃ (MT) for the fabrication of the Ba(Zr_0.20Ti_0.80)O₃:MgTiO₃ (BZT:MT) heterostructured thin films by sol-gel processing. The dielectric properties of heterostructured thin films were characterized by measuring the dielectric constant and dielectric loss as a function of temperature, applied electric field and frequency. As a result, both MT and BZT remained as two distinct individual entities in the heterostructured thin films and a considerable reduction in the dielectric loss has been observed. The heterostructured thin films with lower dielectric constant and dielectric loss could be attractive materials for tunable microwave device. © 2008 Elsevier B.V. All rights reserved.