Dielectric Breakdown Characteristics and Interface Trapping of Hafnium Oxide Films

N. Zhan; M. C. Poon; Hei Wong; K. L. Ng; C. W. Kok; V. Filip

doi:10.1109/ICMEL.2004.1314907

Dielectric Breakdown Characteristics and Interface Trapping of Hafnium Oxide Films

N. Zhan, M. C. Poon, Hei Wong, K. L. Ng, C. W. Kok, V. Filip

Department of Electrical Engineering

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

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Abstract

The breakdown characteristics of hafnium gate oxide prepared by direct sputtering with rapid thermal annealing are investigated in detail. We found that several soft breakdowns take place before a hard breakdown. Area and stress-voltage effects of the time-dependent dielectric breakdown are also observed. Results suggest that that the soft and hard breakdowns should have different precursor defects. A two-layer model of is proposed to explain these observations.

Original language	English
Title of host publication	PROCEEDINGS - 2004 24th INTERNATIONAL CONFERENCE ON MICROELECTRONICS
Pages	629-632
Volume	2
DOIs	https://doi.org/10.1109/ICMEL.2004.1314907
Publication status	Published - May 2004
Event	2004 24th International Conference on Microelectronics (MIEL 2004) - Nis, Serbia Duration: 16 May 2004 → 19 May 2004

Conference

Conference	2004 24th International Conference on Microelectronics (MIEL 2004)
Place	Serbia
City	Nis
Period	16/05/04 → 19/05/04

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@inproceedings{9315a649608a4bd8810dca40f2927fe3,

title = "Dielectric Breakdown Characteristics and Interface Trapping of Hafnium Oxide Films",

abstract = "The breakdown characteristics of hafnium gate oxide prepared by direct sputtering with rapid thermal annealing are investigated in detail. We found that several soft breakdowns take place before a hard breakdown. Area and stress-voltage effects of the time-dependent dielectric breakdown are also observed. Results suggest that that the soft and hard breakdowns should have different precursor defects. A two-layer model of is proposed to explain these observations.",

author = "N. Zhan and Poon, {M. C.} and Hei Wong and Ng, {K. L.} and Kok, {C. W.} and V. Filip",

year = "2004",

month = may,

doi = "10.1109/ICMEL.2004.1314907",

language = "English",

isbn = "0780381661",

volume = "2",

pages = "629--632",

booktitle = "PROCEEDINGS - 2004 24th INTERNATIONAL CONFERENCE ON MICROELECTRONICS",

note = "2004 24th International Conference on Microelectronics (MIEL 2004) ; Conference date: 16-05-2004 Through 19-05-2004",

}

Zhan, N, Poon, MC, Wong, H, Ng, KL, Kok, CW & Filip, V 2004, Dielectric Breakdown Characteristics and Interface Trapping of Hafnium Oxide Films. in PROCEEDINGS - 2004 24th INTERNATIONAL CONFERENCE ON MICROELECTRONICS. vol. 2, pp. 629-632, 2004 24th International Conference on Microelectronics (MIEL 2004), Nis, Serbia, 16/05/04. https://doi.org/10.1109/ICMEL.2004.1314907

Dielectric Breakdown Characteristics and Interface Trapping of Hafnium Oxide Films. / Zhan, N.; Poon, M. C.; Wong, Hei et al.
PROCEEDINGS - 2004 24th INTERNATIONAL CONFERENCE ON MICROELECTRONICS. Vol. 2 2004. p. 629-632.

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - Dielectric Breakdown Characteristics and Interface Trapping of Hafnium Oxide Films

AU - Zhan, N.

AU - Poon, M. C.

AU - Wong, Hei

AU - Ng, K. L.

AU - Kok, C. W.

AU - Filip, V.

PY - 2004/5

Y1 - 2004/5

N2 - The breakdown characteristics of hafnium gate oxide prepared by direct sputtering with rapid thermal annealing are investigated in detail. We found that several soft breakdowns take place before a hard breakdown. Area and stress-voltage effects of the time-dependent dielectric breakdown are also observed. Results suggest that that the soft and hard breakdowns should have different precursor defects. A two-layer model of is proposed to explain these observations.

AB - The breakdown characteristics of hafnium gate oxide prepared by direct sputtering with rapid thermal annealing are investigated in detail. We found that several soft breakdowns take place before a hard breakdown. Area and stress-voltage effects of the time-dependent dielectric breakdown are also observed. Results suggest that that the soft and hard breakdowns should have different precursor defects. A two-layer model of is proposed to explain these observations.

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U2 - 10.1109/ICMEL.2004.1314907

DO - 10.1109/ICMEL.2004.1314907

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 0780381661

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SP - 629

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BT - PROCEEDINGS - 2004 24th INTERNATIONAL CONFERENCE ON MICROELECTRONICS

T2 - 2004 24th International Conference on Microelectronics (MIEL 2004)

Y2 - 16 May 2004 through 19 May 2004

ER -

Dielectric Breakdown Characteristics and Interface Trapping of Hafnium Oxide Films

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