Dielectric breakdown characteristics and interface trapping of hafnium oxide films

N. Zhan; M.C. Poon; Hei Wong; K.L. Ng; C.W. Kok

doi:10.1016/j.mejo.2004.10.006

Dielectric breakdown characteristics and interface trapping of hafnium oxide films

N. Zhan, M.C. Poon, Hei Wong, K.L. Ng, C.W. Kok

Department of Electrical Engineering

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

18 Citations (Scopus)

Abstract

The reliability and integrity of HfO ₂ prepared by direct sputtering of hafnium were studied. By monitoring the current-voltage and current-stressing duration characteristics, we found a significant charge trapping effect in thin film with very short stressing time (<30 s) but the stress-induced trap generation is insignificant. The breakdown characteristics of hafnium gate oxide were also investigated in detail. We found that several soft breakdowns take place before a hard breakdown. Area and stress-voltage effects of the time-dependent dielectric breakdown were observed. Results suggest that the soft and hard breakdowns should have different precursor defects. A two-layer breakdown model of is proposed to explain these observations.

Original language	English
Pages (from-to)	29-33
Journal	Microelectronics Journal
Volume	36
Issue number	1
Online published	10 Dec 2004
DOIs	https://doi.org/10.1016/j.mejo.2004.10.006
Publication status	Published - Jan 2005

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abstract = "The reliability and integrity of HfO 2 prepared by direct sputtering of hafnium were studied. By monitoring the current-voltage and current-stressing duration characteristics, we found a significant charge trapping effect in thin film with very short stressing time (<30 s) but the stress-induced trap generation is insignificant. The breakdown characteristics of hafnium gate oxide were also investigated in detail. We found that several soft breakdowns take place before a hard breakdown. Area and stress-voltage effects of the time-dependent dielectric breakdown were observed. Results suggest that the soft and hard breakdowns should have different precursor defects. A two-layer breakdown model of is proposed to explain these observations.",

author = "N. Zhan and M.C. Poon and Hei Wong and K.L. Ng and C.W. Kok",

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T1 - Dielectric breakdown characteristics and interface trapping of hafnium oxide films

AU - Zhan, N.

AU - Poon, M.C.

AU - Wong, Hei

AU - Ng, K.L.

AU - Kok, C.W.

PY - 2005/1

Y1 - 2005/1

N2 - The reliability and integrity of HfO 2 prepared by direct sputtering of hafnium were studied. By monitoring the current-voltage and current-stressing duration characteristics, we found a significant charge trapping effect in thin film with very short stressing time (<30 s) but the stress-induced trap generation is insignificant. The breakdown characteristics of hafnium gate oxide were also investigated in detail. We found that several soft breakdowns take place before a hard breakdown. Area and stress-voltage effects of the time-dependent dielectric breakdown were observed. Results suggest that the soft and hard breakdowns should have different precursor defects. A two-layer breakdown model of is proposed to explain these observations.

AB - The reliability and integrity of HfO 2 prepared by direct sputtering of hafnium were studied. By monitoring the current-voltage and current-stressing duration characteristics, we found a significant charge trapping effect in thin film with very short stressing time (<30 s) but the stress-induced trap generation is insignificant. The breakdown characteristics of hafnium gate oxide were also investigated in detail. We found that several soft breakdowns take place before a hard breakdown. Area and stress-voltage effects of the time-dependent dielectric breakdown were observed. Results suggest that the soft and hard breakdowns should have different precursor defects. A two-layer breakdown model of is proposed to explain these observations.

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DO - 10.1016/j.mejo.2004.10.006

M3 - RGC 21 - Publication in refereed journal

SN - 0026-2692

VL - 36

SP - 29

EP - 33

JO - Microelectronics Journal

JF - Microelectronics Journal

IS - 1

ER -

Dielectric breakdown characteristics and interface trapping of hafnium oxide films

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