Abstract
The effects of different carrying gases on the thickness of Si nanowires, synthesized by laser ablation, were examined. The carrying gases used were He, N2, and Ar mixed with 5% H2 gases. Nanowire characteristics were studied by transmission electron microscopy, X-ray photoelectron microscopy, electron energy dispersive spectroscopy, and Raman scattering. The study provides a method of producing ample quantities of ultra-long and thin nanowires to facilitate quasi-one-dimensional Si quantum structure studies with ease.
| Original language | English |
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| Pages (from-to) | 1842-1844 |
| Journal | Applied Physics Letters |
| Volume | 75 |
| Issue number | 13 |
| DOIs | |
| Publication status | Published - 27 Sept 1999 |