Diameter modification of silicon nanowires by ambient gas

Y. F. Zhang, Y. H. Tang, H. Y. Peng, N. Wang, C. S. Lee, I. Bello, S. T. Lee

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

104 Citations (Scopus)

Abstract

The effects of different carrying gases on the thickness of Si nanowires, synthesized by laser ablation, were examined. The carrying gases used were He, N2, and Ar mixed with 5% H2 gases. Nanowire characteristics were studied by transmission electron microscopy, X-ray photoelectron microscopy, electron energy dispersive spectroscopy, and Raman scattering. The study provides a method of producing ample quantities of ultra-long and thin nanowires to facilitate quasi-one-dimensional Si quantum structure studies with ease.
Original languageEnglish
Pages (from-to)1842-1844
JournalApplied Physics Letters
Volume75
Issue number13
DOIs
Publication statusPublished - 27 Sept 1999

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