Diameter modification of silicon nanowires by ambient gas
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
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Detail(s)
Original language | English |
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Pages (from-to) | 1842-1844 |
Journal / Publication | Applied Physics Letters |
Volume | 75 |
Issue number | 13 |
Publication status | Published - 27 Sept 1999 |
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Abstract
The effects of different carrying gases on the thickness of Si nanowires, synthesized by laser ablation, were examined. The carrying gases used were He, N2, and Ar mixed with 5% H2 gases. Nanowire characteristics were studied by transmission electron microscopy, X-ray photoelectron microscopy, electron energy dispersive spectroscopy, and Raman scattering. The study provides a method of producing ample quantities of ultra-long and thin nanowires to facilitate quasi-one-dimensional Si quantum structure studies with ease.
Citation Format(s)
Diameter modification of silicon nanowires by ambient gas. / Zhang, Y. F.; Tang, Y. H.; Peng, H. Y. et al.
In: Applied Physics Letters, Vol. 75, No. 13, 27.09.1999, p. 1842-1844.
In: Applied Physics Letters, Vol. 75, No. 13, 27.09.1999, p. 1842-1844.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review