Diameter modification of silicon nanowires by ambient gas

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Y. F. Zhang
  • Y. H. Tang
  • H. Y. Peng
  • N. Wang
  • I. Bello
  • S. T. Lee

Detail(s)

Original languageEnglish
Pages (from-to)1842-1844
Journal / PublicationApplied Physics Letters
Volume75
Issue number13
Publication statusPublished - 27 Sept 1999

Abstract

The effects of different carrying gases on the thickness of Si nanowires, synthesized by laser ablation, were examined. The carrying gases used were He, N2, and Ar mixed with 5% H2 gases. Nanowire characteristics were studied by transmission electron microscopy, X-ray photoelectron microscopy, electron energy dispersive spectroscopy, and Raman scattering. The study provides a method of producing ample quantities of ultra-long and thin nanowires to facilitate quasi-one-dimensional Si quantum structure studies with ease.

Citation Format(s)

Diameter modification of silicon nanowires by ambient gas. / Zhang, Y. F.; Tang, Y. H.; Peng, H. Y. et al.
In: Applied Physics Letters, Vol. 75, No. 13, 27.09.1999, p. 1842-1844.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review