Diameter dependence of electron mobility in InGaAs nanowires

Jared J. Hou; Fengyun Wang; Ning Han; Haoshen Zhu; Kitwa Fok; Waichak Lam; Senpo Yip; Takfu Hung; Joshua E.-Y. Lee; Johnny C. Ho

doi:10.1063/1.4794414

Diameter dependence of electron mobility in InGaAs nanowires

Jared J. Hou
, Fengyun Wang
, Ning Han
, Haoshen Zhu
, Kitwa Fok
, Waichak Lam
, Senpo Yip
, Takfu Hung
, Joshua E.-Y. Lee
, Johnny C. Ho

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

33 Citations (Scopus)

32 Downloads (CityUHK Scholars)

Abstract

In this work, we present the diameter dependent electron mobility study of InGaAs nanowires (NWs) grown by gold-catalyzed vapor transport method. These single crystalline nanowires have an In-rich stoichiometry (i.e., In _0.7Ga_0.3As) with dispersed diameters from 15 to 55 nm. The current-voltage behaviors of fabricated nanowire field-effect transistors reveal that the aggressive scaling of nanowire diameter will induce a degradation of electron mobility, while low-temperature measurements further decouple the effects of surface/interface traps and phonon scattering, highlighting the impact of surface roughness scattering on the electron mobility. This work suggests a careful design consideration of nanowire dimension is required for achieving the optimal device performances. © 2013 American Institute of Physics.

Original language	English
Article number	93112
Journal	Applied Physics Letters
Volume	102
Issue number	9
DOIs	https://doi.org/10.1063/1.4794414
Publication status	Published - 4 Mar 2013

Publisher's Copyright Statement

COPYRIGHT TERMS OF DEPOSITED FINAL PUBLISHED VERSION FILE: This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Jared J. Hou, Fengyun Wang, Ning Han, Haoshen Zhu, KitWa Fok, WaiChak Lam, SenPo Yip, TakFu Hung, Joshua E.-Y. Lee, and Johnny C. Ho , "Diameter dependence of electron mobility in InGaAs nanowires", Appl. Phys. Lett. 102, 093112 (2013) and may be found at https://doi.org/10.1063/1.4794414.

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title = "Diameter dependence of electron mobility in InGaAs nanowires",

abstract = "In this work, we present the diameter dependent electron mobility study of InGaAs nanowires (NWs) grown by gold-catalyzed vapor transport method. These single crystalline nanowires have an In-rich stoichiometry (i.e., In 0.7Ga0.3As) with dispersed diameters from 15 to 55 nm. The current-voltage behaviors of fabricated nanowire field-effect transistors reveal that the aggressive scaling of nanowire diameter will induce a degradation of electron mobility, while low-temperature measurements further decouple the effects of surface/interface traps and phonon scattering, highlighting the impact of surface roughness scattering on the electron mobility. This work suggests a careful design consideration of nanowire dimension is required for achieving the optimal device performances. {\textcopyright} 2013 American Institute of Physics.",

author = "Hou, \{Jared J.\} and Fengyun Wang and Ning Han and Haoshen Zhu and Kitwa Fok and Waichak Lam and Senpo Yip and Takfu Hung and Lee, \{Joshua E.-Y.\} and Ho, \{Johnny C.\}",

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T1 - Diameter dependence of electron mobility in InGaAs nanowires

AU - Hou, Jared J.

AU - Wang, Fengyun

AU - Han, Ning

AU - Zhu, Haoshen

AU - Fok, Kitwa

AU - Lam, Waichak

AU - Yip, Senpo

AU - Hung, Takfu

AU - Lee, Joshua E.-Y.

AU - Ho, Johnny C.

PY - 2013/3/4

Y1 - 2013/3/4

N2 - In this work, we present the diameter dependent electron mobility study of InGaAs nanowires (NWs) grown by gold-catalyzed vapor transport method. These single crystalline nanowires have an In-rich stoichiometry (i.e., In 0.7Ga0.3As) with dispersed diameters from 15 to 55 nm. The current-voltage behaviors of fabricated nanowire field-effect transistors reveal that the aggressive scaling of nanowire diameter will induce a degradation of electron mobility, while low-temperature measurements further decouple the effects of surface/interface traps and phonon scattering, highlighting the impact of surface roughness scattering on the electron mobility. This work suggests a careful design consideration of nanowire dimension is required for achieving the optimal device performances. © 2013 American Institute of Physics.

AB - In this work, we present the diameter dependent electron mobility study of InGaAs nanowires (NWs) grown by gold-catalyzed vapor transport method. These single crystalline nanowires have an In-rich stoichiometry (i.e., In 0.7Ga0.3As) with dispersed diameters from 15 to 55 nm. The current-voltage behaviors of fabricated nanowire field-effect transistors reveal that the aggressive scaling of nanowire diameter will induce a degradation of electron mobility, while low-temperature measurements further decouple the effects of surface/interface traps and phonon scattering, highlighting the impact of surface roughness scattering on the electron mobility. This work suggests a careful design consideration of nanowire dimension is required for achieving the optimal device performances. © 2013 American Institute of Physics.

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U2 - 10.1063/1.4794414

DO - 10.1063/1.4794414

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

M1 - 93112

ER -

Diameter dependence of electron mobility in InGaAs nanowires

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