TY - JOUR
T1 - Device Process and Circuit Application Interaction for Harsh Electronics
T2 - Hf-In-Zn-O Thin Film Transistors as an Example
AU - Ho, Chih-Hsiang
AU - Tsai, Dung-Sheng
AU - Lu, Chao
AU - Kim, Soo Youn
AU - Mungan, Selin
AU - Yang, Shih-Guo
AU - Zhang, Yuanzhi
AU - He, Jr-Hau
PY - 2017/8
Y1 - 2017/8
N2 - The effects of Hf content on the radiation hardness of Hf-In-Zn-O thin-film transistors (HIZO TFTs) and HIZO TFT-based circuits are systemically examined. The evaluated circuits, including current-starved ring oscillator, energy harvesting, and RF circuits, are essential for space electronic systems. It is shown that HIZO TFTs with low Hf concentration have better initial performance while TFTs with high Hf concentration are more stable against radiation. On the other hand, for circuit application, the stable HIZO TFTs are not necessarily preferred for all circuits. This letter demonstrates that understanding the device-circuit interactions is necessary for device optimization and circuit reliability improvements for harsh electronic systems.
AB - The effects of Hf content on the radiation hardness of Hf-In-Zn-O thin-film transistors (HIZO TFTs) and HIZO TFT-based circuits are systemically examined. The evaluated circuits, including current-starved ring oscillator, energy harvesting, and RF circuits, are essential for space electronic systems. It is shown that HIZO TFTs with low Hf concentration have better initial performance while TFTs with high Hf concentration are more stable against radiation. On the other hand, for circuit application, the stable HIZO TFTs are not necessarily preferred for all circuits. This letter demonstrates that understanding the device-circuit interactions is necessary for device optimization and circuit reliability improvements for harsh electronic systems.
KW - harsh electronics
KW - Hf-In-Zn-O (HIZO)
KW - thin film transistor (TFT)
UR - http://www.scopus.com/inward/record.url?scp=85023779501&partnerID=8YFLogxK
UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-85023779501&origin=recordpage
U2 - 10.1109/LED.2017.2720186
DO - 10.1109/LED.2017.2720186
M3 - RGC 21 - Publication in refereed journal
SN - 0741-3106
VL - 38
SP - 1039
EP - 1042
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 8
M1 - 7959154
ER -