Development of Ohmic nanocontacts via surface modification for nanowire-based electronic and optoelectronic devices : ZnO nanowires as an example

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Jr-Jian Ke
  • Pei-Hsin Chang
  • Kun-Tong Tsai
  • P. C. Yang
  • I-Min Chan

Detail(s)

Original languageEnglish
Pages (from-to)3399-3404
Journal / PublicationNanoscale
Volume4
Issue number11
Online published23 Apr 2012
Publication statusPublished - 7 Jun 2012
Externally publishedYes

Abstract

We demonstrated a nanocontacting scheme using a focus ion beam (FIB) system without further heat treatment for ZnO nanowires. This scheme includes Ga ion surface modification and direct-write Pt deposition induced by Ga ion, leading to an Ohmic nanocontact with a specific contact resistance as low as 2.5 × 10-6 Ω cm2. Temperature-dependent measurements show that the transport of the FIB-Pt contact on the ZnO nanowire with local surface modification is governed by field emission tunneling. Taking advantage of area-selected and room-temperature processes, Ga ion surface modification and direct-write Pt deposition using a FIB system demonstrates a feasible Ohmic scheme.

Citation Format(s)

Development of Ohmic nanocontacts via surface modification for nanowire-based electronic and optoelectronic devices : ZnO nanowires as an example. / He, Jr-Hau; Ke, Jr-Jian; Chang, Pei-Hsin; Tsai, Kun-Tong; Yang, P. C.; Chan, I-Min.

In: Nanoscale, Vol. 4, No. 11, 07.06.2012, p. 3399-3404.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review