Development of high TC PMN-PZT piezoelectric single crystals by the solid-state crystal growth (SSCG) technique

H. Y. Lee; S. J. Zhang; T. R. Shrout

doi:10.1109/ISAF.2008.4693824

Development of high T_C PMN-PZT piezoelectric single crystals by the solid-state crystal growth (SSCG) technique

H. Y. Lee
, S. J. Zhang
, T. R. Shrout

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

5 Citations (Scopus)

Abstract

Single crystals in the ternary MPB PMNPZ-PT system with relatively high Tcs and Ecs were fabricated by the solid-state single crystal growth (SSCG) technique and their dielectric and piezoelectric properties characterized. The dc bias effect on T_RT (or the application usage temperature range), the high field unipolar strain, and the strain fatigue behavior induced by a phase change were investigated. Compared to PMN-PT single crystals, the high T_C/E_C PMN-PZT single crystals (T_RT=144°C and E_C=4.6kV/cm) were found to exhibit a much wider usage range with respect to electric field as well as temperature, and thus are better candidates for application in transducers and actuators.
© 2008 IEEE

Original language	English
Title of host publication	17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008
Volume	2
DOIs	https://doi.org/10.1109/ISAF.2008.4693824
Publication status	Published - 2008
Externally published	Yes
Event	17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008 - Santa Fe, NM, United States Duration: 23 Feb 2008 → 28 Feb 2008

Publication series

Name	IEEE International Symposium on Applications of Ferroelectrics
Volume	2

Conference

Conference	17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008
Place	United States
City	Santa Fe, NM
Period	23/02/08 → 28/02/08

Bibliographical note

Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

Funding

This work was supported by the ONR and NIH under No. P41-RR11795.

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10.1109/ISAF.2008.4693824

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Lee, H. Y., Zhang, S. J., & Shrout, T. R. (2008). Development of high T_C PMN-PZT piezoelectric single crystals by the solid-state crystal growth (SSCG) technique. In 17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008 (Vol. 2). Article 4693824 (IEEE International Symposium on Applications of Ferroelectrics; Vol. 2). https://doi.org/10.1109/ISAF.2008.4693824

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title = "Development of high TC PMN-PZT piezoelectric single crystals by the solid-state crystal growth (SSCG) technique",

abstract = "Single crystals in the ternary MPB PMNPZ-PT system with relatively high Tcs and Ecs were fabricated by the solid-state single crystal growth (SSCG) technique and their dielectric and piezoelectric properties characterized. The dc bias effect on TRT (or the application usage temperature range), the high field unipolar strain, and the strain fatigue behavior induced by a phase change were investigated. Compared to PMN-PT single crystals, the high TC/EC PMN-PZT single crystals (TRT=144°C and EC=4.6kV/cm) were found to exhibit a much wider usage range with respect to electric field as well as temperature, and thus are better candidates for application in transducers and actuators. {\textcopyright} 2008 IEEE",

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Lee, HY, Zhang, SJ & Shrout, TR 2008, Development of high T_C PMN-PZT piezoelectric single crystals by the solid-state crystal growth (SSCG) technique. in 17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008. vol. 2, 4693824, IEEE International Symposium on Applications of Ferroelectrics, vol. 2, 17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008, Santa Fe, NM, United States, 23/02/08. https://doi.org/10.1109/ISAF.2008.4693824

Development of high T_C PMN-PZT piezoelectric single crystals by the solid-state crystal growth (SSCG) technique. / Lee, H. Y.; Zhang, S. J.; Shrout, T. R.
17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008. Vol. 2 2008. 4693824 (IEEE International Symposium on Applications of Ferroelectrics; Vol. 2).

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

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N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

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AB - Single crystals in the ternary MPB PMNPZ-PT system with relatively high Tcs and Ecs were fabricated by the solid-state single crystal growth (SSCG) technique and their dielectric and piezoelectric properties characterized. The dc bias effect on TRT (or the application usage temperature range), the high field unipolar strain, and the strain fatigue behavior induced by a phase change were investigated. Compared to PMN-PT single crystals, the high TC/EC PMN-PZT single crystals (TRT=144°C and EC=4.6kV/cm) were found to exhibit a much wider usage range with respect to electric field as well as temperature, and thus are better candidates for application in transducers and actuators. © 2008 IEEE

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