Determination of the optimal sensing temperature in Pt/Ta2O5/MoO3 schottky contacted nanobelt straddling heterojunction

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Original languageEnglish
Article number3770
Journal / PublicationSensors (Switzerland)
Issue number11
Online published5 Nov 2018
Publication statusPublished - Nov 2018



Nanostructured Schottky barrier gas sensors have emerged as novel semiconductor devices with large surface areas and unique electronic characteristics. Although it is widely known that operating these gas sensors requires heating to an optimal temperature for the highest sensitivity, the fundamental mechanism that governs the temperature-dependent sensitivity has yet been well understood. In this work, we present new evidence to support that thermionic field emission (TFE) is the dominant transport mechanism for Schottky contacted nanostructured heterojunction gas sensors at their optimal sensing temperature. Through the fabrication and characterization of Pt/MoO3 Schottky contacts, and Pt/Ta2O5/MoO3 heterojunctions, we found a previously unreported connection between TFE transport and optimal gas sensing temperature. This connection enables the description of Schottky barrier gas sensing performance using transport theory, which is a major step towards systematic engineering of gas sensors with nanostructured high-k oxide layers.

Research Area(s)

  • Heterojunction, MoO3, Nanobelt, Optimal sensing temperature, Schottky barrier, Ta2O5

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