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Determination of nitrogen-related defects in N-implanted ZnO films by dynamic cathodoluminescence

  • Y. F. Mei
  • , G. G. Siu
  • , Ricky K.Y. Fu
  • , K. W. Wong
  • , Paul K. Chu
  • , C. W. Lai
  • , H. C. Ong

    Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

    Abstract

    Visible bands arising from N-related defects are investigated by dynamic cathodoluminescence (CL) and Gaussian deconvolution. The intensity of the red band increases while that of the ultraviolet (UV) band decreases. The intensity of the yellow band also decreases but only slightly as a function of the electron bombardment cycle. The CL behavior of N-doped ZnO after post-annealing in N2 at high temperature reveals that the N-related defects cannot be easily compensated. The results also confirm the assignment of the N-related defects and are in agreement with the theoretical prediction about Zn-N bonding. Our data provide some clues to the mechanism of the conversion of ZnO into p-type by nitrogen doping. © 2005 Elsevier B.V. All rights reserved.
    Original languageEnglish
    Pages (from-to)307-311
    JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
    Volume237
    Issue number1-2
    DOIs
    Publication statusPublished - Aug 2005
    Event15th International Conference on Ion Implantation Technology (IIT 2004) - The Grand Hotel, Taipei, Taiwan, China
    Duration: 25 Oct 200429 Oct 2004

    Research Keywords

    • Cathodoluminescence
    • Defects
    • Nitrogen doping
    • Zinc oxide

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