Determination of N-/Ga-rich growth conditions, using in-situ auger electron spectroscopy

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • S. P. Svensson
  • W. L. Sarney
  • M. Ting
  • W. L. Calley
  • S. V. Novikov
  • C. T. Foxon
  • W. Walukiewicz

Detail(s)

Original languageEnglish
Pages (from-to)2-4
Journal / PublicationJournal of Crystal Growth
Volume425
Online published21 Feb 2015
Publication statusPublished - 1 Sep 2015

Abstract

In-situ Auger electron spectroscopy was used to determine the 1:1 flux ratios of Ga and N during growth of GaN by molecular beam epitaxy at low substrate temperatures. By linearly ramping the Ga-flux, while keeping the N-flux constant, and simultaneously measuring the chemical composition by monitoring N and Ga Auger peaks, the time of deviation from stoichiometry could be determined. The method was applied at very low substrate temperatures where reflection high-energy electron diffraction does not reveal clear growth mode changes. The importance of the N- vs Ga-rich conditions were confirmed with transmission electron microscopy which showed a distinct change in crystallinity between material at the top and bottom of the film, which are in agreement with previous findings.

Research Area(s)

  • A1. Characterization, A1. Surface structure, A3. Nitrides, B1. Gallium compounds, B2. Semiconducting gallium compounds, B2. Semiconducting III-V materials

Citation Format(s)

Determination of N-/Ga-rich growth conditions, using in-situ auger electron spectroscopy. / Svensson, S. P.; Sarney, W. L.; Yu, K. M.; Ting, M.; Calley, W. L.; Novikov, S. V.; Foxon, C. T.; Walukiewicz, W.

In: Journal of Crystal Growth, Vol. 425, 01.09.2015, p. 2-4.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review