Determination of metal/Si contact temperature during electrical current stressing

C. N. Liao; O. J. Chen; K. N. Tu

doi:10.1109/ICT.2002.1190336

Determination of metal/Si contact temperature during electrical current stressing

C. N. Liao
, O. J. Chen
, K. N. Tu

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

Abstract

Interconnect reliability of very-large-scale-integrated (VLSI) circuits is a temperature-sensitive issue. However, it is extremely difficult to measure the temperature at a tiny contact using conventional methods. In this study a method of measuring contact temperature under electrical current stressing is devised using typical Kelvin test structures together with our special designed Seebeck coefficient test structures. The Ni/Si contacts on both p∗-Si and n+-Si with a contact size of 10 × 10 μm2 were examined using this method. When applying a current density of 104 A/cm2 through the contacts, the contact temperature is found to increase as much as by 20°C. The influences of substrate temperature and stressing current on the Ni/Si contact resistance are also discussed.

Original language	English
Title of host publication	Proceedings ICT 2002: 21st International Conference on Thermoelectrics
Publisher	IEEE
Pages	345-348
Volume	2002-January
ISBN (Print)	0780376838
DOIs	https://doi.org/10.1109/ICT.2002.1190336
Publication status	Published - 2002
Externally published	Yes
Event	21st International Conference on Thermoelectrics, ICT 2002 - Hyatt Regency Hotel, Long Beach, United States Duration: 25 Aug 2002 → 29 Aug 2002 http://wordpress.cvining.com/ict2002/www.its.its.org/ict2002/index.html https://ieeexplore.ieee.org/document/1190250

Publication series

Name	International Conference on Thermoelectrics, ICT, Proceedings
Volume	2002-January

Conference

Conference	21st International Conference on Thermoelectrics, ICT 2002
Place	United States
City	Long Beach
Period	25/08/02 → 29/08/02
Internet address	http://wordpress.cvining.com/ict2002/www.its.its.org/ict2002/index.html https://ieeexplore.ieee.org/document/1190250

Bibliographical note

Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

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10.1109/ICT.2002.1190336

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Liao, C. N., Chen, O. J., & Tu, K. N. (2002). Determination of metal/Si contact temperature during electrical current stressing. In Proceedings ICT 2002: 21st International Conference on Thermoelectrics (Vol. 2002-January, pp. 345-348). Article 1190336 (International Conference on Thermoelectrics, ICT, Proceedings; Vol. 2002-January). IEEE. https://doi.org/10.1109/ICT.2002.1190336

@inproceedings{45697d9521bb41b1a1dafc928112684e,

title = "Determination of metal/Si contact temperature during electrical current stressing",

abstract = "Interconnect reliability of very-large-scale-integrated (VLSI) circuits is a temperature-sensitive issue. However, it is extremely difficult to measure the temperature at a tiny contact using conventional methods. In this study a method of measuring contact temperature under electrical current stressing is devised using typical Kelvin test structures together with our special designed Seebeck coefficient test structures. The Ni/Si contacts on both p∗-Si and n+-Si with a contact size of 10 × 10 μm2 were examined using this method. When applying a current density of 104 A/cm2 through the contacts, the contact temperature is found to increase as much as by 20°C. The influences of substrate temperature and stressing current on the Ni/Si contact resistance are also discussed.",

author = "Liao, \{C. N.\} and Chen, \{O. J.\} and Tu, \{K. N.\}",

note = "Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].; 21st International Conference on Thermoelectrics, ICT 2002 ; Conference date: 25-08-2002 Through 29-08-2002",

year = "2002",

doi = "10.1109/ICT.2002.1190336",

language = "English",

isbn = "0780376838",

volume = "2002-January",

series = "International Conference on Thermoelectrics, ICT, Proceedings",

publisher = "IEEE",

pages = "345--348",

booktitle = "Proceedings ICT 2002: 21st International Conference on Thermoelectrics",

address = "United States",

url = "http://wordpress.cvining.com/ict2002/www.its.its.org/ict2002/index.html, https://ieeexplore.ieee.org/document/1190250",

}

Liao, CN, Chen, OJ & Tu, KN 2002, Determination of metal/Si contact temperature during electrical current stressing. in Proceedings ICT 2002: 21st International Conference on Thermoelectrics. vol. 2002-January, 1190336, International Conference on Thermoelectrics, ICT, Proceedings, vol. 2002-January, IEEE, pp. 345-348, 21st International Conference on Thermoelectrics, ICT 2002, Long Beach, California, United States, 25/08/02. https://doi.org/10.1109/ICT.2002.1190336

Determination of metal/Si contact temperature during electrical current stressing. / Liao, C. N.; Chen, O. J.; Tu, K. N.
Proceedings ICT 2002: 21st International Conference on Thermoelectrics. Vol. 2002-January IEEE, 2002. p. 345-348 1190336 (International Conference on Thermoelectrics, ICT, Proceedings; Vol. 2002-January).

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - Determination of metal/Si contact temperature during electrical current stressing

AU - Liao, C. N.

AU - Chen, O. J.

AU - Tu, K. N.

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 2002

Y1 - 2002

N2 - Interconnect reliability of very-large-scale-integrated (VLSI) circuits is a temperature-sensitive issue. However, it is extremely difficult to measure the temperature at a tiny contact using conventional methods. In this study a method of measuring contact temperature under electrical current stressing is devised using typical Kelvin test structures together with our special designed Seebeck coefficient test structures. The Ni/Si contacts on both p∗-Si and n+-Si with a contact size of 10 × 10 μm2 were examined using this method. When applying a current density of 104 A/cm2 through the contacts, the contact temperature is found to increase as much as by 20°C. The influences of substrate temperature and stressing current on the Ni/Si contact resistance are also discussed.

AB - Interconnect reliability of very-large-scale-integrated (VLSI) circuits is a temperature-sensitive issue. However, it is extremely difficult to measure the temperature at a tiny contact using conventional methods. In this study a method of measuring contact temperature under electrical current stressing is devised using typical Kelvin test structures together with our special designed Seebeck coefficient test structures. The Ni/Si contacts on both p∗-Si and n+-Si with a contact size of 10 × 10 μm2 were examined using this method. When applying a current density of 104 A/cm2 through the contacts, the contact temperature is found to increase as much as by 20°C. The influences of substrate temperature and stressing current on the Ni/Si contact resistance are also discussed.

UR - https://www.scopus.com/pages/publications/84949746158

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-84949746158&origin=recordpage

U2 - 10.1109/ICT.2002.1190336

DO - 10.1109/ICT.2002.1190336

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 0780376838

VL - 2002-January

T3 - International Conference on Thermoelectrics, ICT, Proceedings

SP - 345

EP - 348

BT - Proceedings ICT 2002: 21st International Conference on Thermoelectrics

PB - IEEE

T2 - 21st International Conference on Thermoelectrics, ICT 2002

Y2 - 25 August 2002 through 29 August 2002

ER -

Determination of metal/Si contact temperature during electrical current stressing

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