Determination of contact and intrinsic nanowire resistivity in two-contact ZnO nanowire devices

Y. F. Lin; W. B. Jian; Z. Y. Wu; F. R. Chen; J. J. Kai; J. J. Lin

doi:10.1109/INEC.2008.4585677

Determination of contact and intrinsic nanowire resistivity in two-contact ZnO nanowire devices

Y. F. Lin, W. B. Jian, Z. Y. Wu, F. R. Chen, J. J. Kai, J. J. Lin

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

Abstract

Cylindrical ZnO nanowires were synthesized to fabricate two-contact ZnO nanowire devices with the same separation distance between the two contact electrodes. Electrical properties including temperature dependence of resistance and I-V curves were recorded. According to distinct electrical behaviors and room-temperature resistance, ZnO nanowire devices can be categorized into three different types exhibiting either contact or intrinsic NW attributes. © 2008 IEEE.

Original language	English
Title of host publication	2008 2nd IEEE International Nanoelectronics Conference, INEC 2008
Pages	1112-1115
DOIs	https://doi.org/10.1109/INEC.2008.4585677
Publication status	Published - 2008
Externally published	Yes
Event	2008 2nd IEEE International Nanoelectronics Conference, INEC 2008 - Shanghai, China Duration: 24 Mar 2008 → 27 Mar 2008

Conference

Conference	2008 2nd IEEE International Nanoelectronics Conference, INEC 2008
Place	China
City	Shanghai
Period	24/03/08 → 27/03/08

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10.1109/INEC.2008.4585677

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@inproceedings{88b9c1c63b7b447eb15b278347115a48,

title = "Determination of contact and intrinsic nanowire resistivity in two-contact ZnO nanowire devices",

abstract = "Cylindrical ZnO nanowires were synthesized to fabricate two-contact ZnO nanowire devices with the same separation distance between the two contact electrodes. Electrical properties including temperature dependence of resistance and I-V curves were recorded. According to distinct electrical behaviors and room-temperature resistance, ZnO nanowire devices can be categorized into three different types exhibiting either contact or intrinsic NW attributes. {\textcopyright} 2008 IEEE.",

author = "Lin, {Y. F.} and Jian, {W. B.} and Wu, {Z. Y.} and Chen, {F. R.} and Kai, {J. J.} and Lin, {J. J.}",

year = "2008",

doi = "10.1109/INEC.2008.4585677",

language = "English",

isbn = "9781424415731",

pages = "1112--1115",

booktitle = "2008 2nd IEEE International Nanoelectronics Conference, INEC 2008",

note = "2008 2nd IEEE International Nanoelectronics Conference, INEC 2008 ; Conference date: 24-03-2008 Through 27-03-2008",

}

Lin, YF, Jian, WB, Wu, ZY, Chen, FR, Kai, JJ & Lin, JJ 2008, Determination of contact and intrinsic nanowire resistivity in two-contact ZnO nanowire devices. in 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008., 4585677, pp. 1112-1115, 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008, Shanghai, China, 24/03/08. https://doi.org/10.1109/INEC.2008.4585677

Determination of contact and intrinsic nanowire resistivity in two-contact ZnO nanowire devices. / Lin, Y. F.; Jian, W. B.; Wu, Z. Y. et al.
2008 2nd IEEE International Nanoelectronics Conference, INEC 2008. 2008. p. 1112-1115 4585677.

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - Determination of contact and intrinsic nanowire resistivity in two-contact ZnO nanowire devices

AU - Lin, Y. F.

AU - Jian, W. B.

AU - Wu, Z. Y.

AU - Chen, F. R.

AU - Kai, J. J.

AU - Lin, J. J.

PY - 2008

Y1 - 2008

N2 - Cylindrical ZnO nanowires were synthesized to fabricate two-contact ZnO nanowire devices with the same separation distance between the two contact electrodes. Electrical properties including temperature dependence of resistance and I-V curves were recorded. According to distinct electrical behaviors and room-temperature resistance, ZnO nanowire devices can be categorized into three different types exhibiting either contact or intrinsic NW attributes. © 2008 IEEE.

AB - Cylindrical ZnO nanowires were synthesized to fabricate two-contact ZnO nanowire devices with the same separation distance between the two contact electrodes. Electrical properties including temperature dependence of resistance and I-V curves were recorded. According to distinct electrical behaviors and room-temperature resistance, ZnO nanowire devices can be categorized into three different types exhibiting either contact or intrinsic NW attributes. © 2008 IEEE.

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UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-52649151374&origin=recordpage

U2 - 10.1109/INEC.2008.4585677

DO - 10.1109/INEC.2008.4585677

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 9781424415731

SP - 1112

EP - 1115

BT - 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008

T2 - 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008

Y2 - 24 March 2008 through 27 March 2008

ER -

Determination of contact and intrinsic nanowire resistivity in two-contact ZnO nanowire devices

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