DETECTION OF HIGH OXYGEN AND CARBON CONTENTS IN SEMI-INSULATING GALLIUM ARSENIDE EPITAXIAL LAYERS GROWN BY MOLECULAR BEAM EPITAXY AT LOW TEMPERATURE

W. S. LAU; Paul K. CHU; C. H. GOO; T. C. CHONG

DETECTION OF HIGH OXYGEN AND CARBON CONTENTS IN SEMI-INSULATING GALLIUM ARSENIDE EPITAXIAL LAYERS GROWN BY MOLECULAR BEAM EPITAXY AT LOW TEMPERATURE

W. S. LAU
, Paul K. CHU
, C. H. GOO
, T. C. CHONG

Research output: Conference Papers › RGC 32 - Refereed conference paper (without host publication) › peer-review

Original language	English
Pages	179-182
Publication status	Published - Nov 1994
Externally published	Yes
Event	3rd International Conference on Materials and Process Characterization for VLSI (ICMPC '94) - Kunming , China Duration: 7 Nov 1994 → 11 Nov 1994

Conference

Conference	3rd International Conference on Materials and Process Characterization for VLSI (ICMPC '94)
Place	China
City	Kunming
Period	7/11/94 → 11/11/94

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@conference{3a2706d5cd214dc796e9357726edaaa2,

title = "DETECTION OF HIGH OXYGEN AND CARBON CONTENTS IN SEMI-INSULATING GALLIUM ARSENIDE EPITAXIAL LAYERS GROWN BY MOLECULAR BEAM EPITAXY AT LOW TEMPERATURE",

author = "LAU, \{W. S.\} and CHU, \{Paul K.\} and GOO, \{C. H.\} and CHONG, \{T. C.\}",

year = "1994",

month = nov,

language = "English",

pages = "179--182",

note = "3rd International Conference on Materials and Process Characterization for VLSI (ICMPC '94)<br/> ; Conference date: 07-11-1994 Through 11-11-1994",

}

DETECTION OF HIGH OXYGEN AND CARBON CONTENTS IN SEMI-INSULATING GALLIUM ARSENIDE EPITAXIAL LAYERS GROWN BY MOLECULAR BEAM EPITAXY AT LOW TEMPERATURE. / LAU, W. S.; CHU, Paul K.; GOO, C. H. et al.
1994. 179-182 Paper presented at 3rd International Conference on Materials and Process Characterization for VLSI (ICMPC '94)
, Kunming , China.

Research output: Conference Papers › RGC 32 - Refereed conference paper (without host publication) › peer-review

TY - CONF

T1 - DETECTION OF HIGH OXYGEN AND CARBON CONTENTS IN SEMI-INSULATING GALLIUM ARSENIDE EPITAXIAL LAYERS GROWN BY MOLECULAR BEAM EPITAXY AT LOW TEMPERATURE

AU - LAU, W. S.

AU - CHU, Paul K.

AU - GOO, C. H.

AU - CHONG, T. C.

PY - 1994/11

Y1 - 1994/11

M3 - RGC 32 - Refereed conference paper (without host publication)

SP - 179

EP - 182

T2 - 3rd International Conference on Materials and Process Characterization for VLSI (ICMPC '94)<br/>

Y2 - 7 November 1994 through 11 November 1994

ER -