TY - GEN
T1 - Designing III-V dilute nitride alloys for IBSC application
AU - Ahsan, Nazmul
AU - Miyashita, Naoya
AU - Yu, Kin Man
AU - Walukiewicz, Wladek
AU - Okada, Yoshitaka
PY - 2016/6
Y1 - 2016/6
N2 - The location of multiple bands in a dilute nitride GaNAs intermediate band solar cell (IBSC) can be tuned by the level of N amount in the GaAs host. It is observed that the open circuit voltage improves with increasing level of the N amount in our MBE grown IBSCs in which GaNAs layers are sandwiched between AlGaAs layers. This is ascribed to the improved blockage of the carrier leakage of the IB electrons over the AlGaAs backside IB barrier due to increased separation between the IB and conduction bands.
AB - The location of multiple bands in a dilute nitride GaNAs intermediate band solar cell (IBSC) can be tuned by the level of N amount in the GaAs host. It is observed that the open circuit voltage improves with increasing level of the N amount in our MBE grown IBSCs in which GaNAs layers are sandwiched between AlGaAs layers. This is ascribed to the improved blockage of the carrier leakage of the IB electrons over the AlGaAs backside IB barrier due to increased separation between the IB and conduction bands.
KW - dilute nitride
KW - III-V semiconductors
KW - Intermediate band solar cell
KW - molecular beam epitaxy
UR - http://www.scopus.com/inward/record.url?scp=85003498846&partnerID=8YFLogxK
UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-85003498846&origin=recordpage
U2 - 10.1109/PVSC.2016.7750154
DO - 10.1109/PVSC.2016.7750154
M3 - RGC 32 - Refereed conference paper (with host publication)
SN - 9781509027248
SN - 9781509027255
SP - 2761
EP - 2764
BT - 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)
PB - IEEE
T2 - 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Y2 - 5 June 2016 through 10 June 2016
ER -
