Designing III-V dilute nitride alloys for IBSC application

Nazmul Ahsan; Naoya Miyashita; Kin Man Yu; Wladek Walukiewicz; Yoshitaka Okada

doi:10.1109/PVSC.2017.8366645

Designing III-V dilute nitride alloys for IBSC application

Nazmul Ahsan, Naoya Miyashita, Kin Man Yu, Wladek Walukiewicz, Yoshitaka Okada

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

Abstract

The location of multiple bands in a dilute nitride GaNAs intermediate band solar cell (IBSC) can be tuned by the level of N amount in the GaAs host. It is observed that the open circuit voltage improves with increasing level of the N amount in our MBE grown IBSCs in which GaNAs layers are sandwiched between AlGaAs layers. This is ascribed to the improved blockage of the carrier leakage of the IB electrons over the AlGaAs backside IB barrier due to increased separation between the IB and conduction bands.

Original language	English
Title of host publication	2017 IEEE 44th Photovoltaic Specialist Conference (PVSC)
Publisher	IEEE
Pages	1-4
ISBN (Print)	9781509056057, 9781509056064
DOIs	https://doi.org/10.1109/PVSC.2017.8366645
Publication status	Published - Jun 2017
Event	44th IEEE Photovoltaic Specialist Conference (PVSC-44) - Washington Marriott Wardman Park, Washington, United States Duration: 25 Jun 2017 → 30 Jun 2017

Conference

Conference	44th IEEE Photovoltaic Specialist Conference (PVSC-44)
Place	United States
City	Washington
Period	25/06/17 → 30/06/17

Research Keywords

Dilute nitride
III- V semiconductors
Intermediate band solar cell
Molecular beam epitaxy

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title = "Designing III-V dilute nitride alloys for IBSC application",

abstract = "The location of multiple bands in a dilute nitride GaNAs intermediate band solar cell (IBSC) can be tuned by the level of N amount in the GaAs host. It is observed that the open circuit voltage improves with increasing level of the N amount in our MBE grown IBSCs in which GaNAs layers are sandwiched between AlGaAs layers. This is ascribed to the improved blockage of the carrier leakage of the IB electrons over the AlGaAs backside IB barrier due to increased separation between the IB and conduction bands.",

keywords = "Dilute nitride, III- V semiconductors, Intermediate band solar cell, Molecular beam epitaxy",

author = "Nazmul Ahsan and Naoya Miyashita and Yu, {Kin Man} and Wladek Walukiewicz and Yoshitaka Okada",

year = "2017",

month = jun,

doi = "10.1109/PVSC.2017.8366645",

language = "English",

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pages = "1--4",

booktitle = "2017 IEEE 44th Photovoltaic Specialist Conference (PVSC)",

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T1 - Designing III-V dilute nitride alloys for IBSC application

AU - Ahsan, Nazmul

AU - Miyashita, Naoya

AU - Yu, Kin Man

AU - Walukiewicz, Wladek

AU - Okada, Yoshitaka

PY - 2017/6

Y1 - 2017/6

N2 - The location of multiple bands in a dilute nitride GaNAs intermediate band solar cell (IBSC) can be tuned by the level of N amount in the GaAs host. It is observed that the open circuit voltage improves with increasing level of the N amount in our MBE grown IBSCs in which GaNAs layers are sandwiched between AlGaAs layers. This is ascribed to the improved blockage of the carrier leakage of the IB electrons over the AlGaAs backside IB barrier due to increased separation between the IB and conduction bands.

AB - The location of multiple bands in a dilute nitride GaNAs intermediate band solar cell (IBSC) can be tuned by the level of N amount in the GaAs host. It is observed that the open circuit voltage improves with increasing level of the N amount in our MBE grown IBSCs in which GaNAs layers are sandwiched between AlGaAs layers. This is ascribed to the improved blockage of the carrier leakage of the IB electrons over the AlGaAs backside IB barrier due to increased separation between the IB and conduction bands.

KW - Dilute nitride

KW - III- V semiconductors

KW - Intermediate band solar cell

KW - Molecular beam epitaxy

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DO - 10.1109/PVSC.2017.8366645

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 9781509056057

SN - 9781509056064

SP - 1

EP - 4

BT - 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC)

PB - IEEE

T2 - 44th IEEE Photovoltaic Specialist Conference (PVSC-44)

Y2 - 25 June 2017 through 30 June 2017

ER -

Designing III-V dilute nitride alloys for IBSC application

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Research Keywords

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