Design of wideband LNA employing cascaded complimentary common gate and common source stages
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Author(s)
Related Research Unit(s)
Detail(s)
| Original language | English |
|---|---|
| Article number | 7932958 |
| Pages (from-to) | 587-589 |
| Journal / Publication | IEEE Microwave and Wireless Components Letters |
| Volume | 27 |
| Issue number | 6 |
| Online published | 23 May 2017 |
| Publication status | Published - Jun 2017 |
Link(s)
Abstract
A wideband low noise amplifier (LNA) is presented, which composes of cascaded complimentary common gate (CCG) stage and common source (CS) stages. Based on the current reusing technique, the CCG stage saves dc power and reduces
chip area by replacing two inductors with one transformer. The source-degenerated CS stage helps form a frequency-dependent load for the CCG stage. With a load reusing technique, this load can be transformed to the input and helps achieve simultaneous wideband gain, wideband input matching, and flat noise figure (NF) over the desired band. The proposed LNA shows the measured 3-dB bandwidth from 7.6 to 29 GHz, the maximum power gain of 10.7 dB, and the NF from 4.5 to 5.6 dB. The power consumption is 12.1 mW with 1-V supply voltage and the chip occupies an area of 0.3 mm2 in Taiwan Semiconductor
Manufacturing Company (TSMC) 65-nm CMOS process.
chip area by replacing two inductors with one transformer. The source-degenerated CS stage helps form a frequency-dependent load for the CCG stage. With a load reusing technique, this load can be transformed to the input and helps achieve simultaneous wideband gain, wideband input matching, and flat noise figure (NF) over the desired band. The proposed LNA shows the measured 3-dB bandwidth from 7.6 to 29 GHz, the maximum power gain of 10.7 dB, and the NF from 4.5 to 5.6 dB. The power consumption is 12.1 mW with 1-V supply voltage and the chip occupies an area of 0.3 mm2 in Taiwan Semiconductor
Manufacturing Company (TSMC) 65-nm CMOS process.
Research Area(s)
- Common source (CS), Complimentary common gate (CCG), Low noise amplifier (LNA), Transformer, Wideband
Citation Format(s)
Design of wideband LNA employing cascaded complimentary common gate and common source stages. / Qin, Pei; Xue, Quan.
In: IEEE Microwave and Wireless Components Letters, Vol. 27, No. 6, 7932958, 06.2017, p. 587-589.Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
