Abstract
In this design contest, the design methodology leading to a high performance Millimeter-wave amplifier in 0.13 μm SiGe BiCMOS is elaborated. Equivalent circuit models of the utilized cascode shielding structure are developed to assist the amplifier design. Meanwhile, final layouts of the passive connections are verified by 3D electromagnetic simulation in ANSYS HFSS. The implemented amplifier obtained a gain more than 45 dB in band, which is the gain record of silicon-based amplifiers in W-band. © 2014 IEEE.
| Original language | English |
|---|---|
| Title of host publication | 2014 19th Asia and South Pacific Design Automation Conference, ASP-DAC 2014 - Proceedings |
| Pages | 27-28 |
| DOIs | |
| Publication status | Published - 2014 |
| Externally published | Yes |
| Event | 2014 19th Asia and South Pacific Design Automation Conference, ASP-DAC 2014 - Suntec, Singapore Duration: 20 Jan 2014 → 23 Jan 2014 https://ieeexplore.ieee.org/xpl/conhome/6736726/proceeding |
Publication series
| Name | Proceedings of the Asia and South Pacific Design Automation Conference, ASP-DAC |
|---|
Conference
| Conference | 2014 19th Asia and South Pacific Design Automation Conference, ASP-DAC 2014 |
|---|---|
| Place | Singapore |
| City | Suntec |
| Period | 20/01/14 → 23/01/14 |
| Internet address |
Bibliographical note
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