Design and analysis of 600 V power MOSFET with multiple field limiting ring

Wing-Shan Tarn; Oi-Ying Wong; Chi-Wah Kok; Hei Wong

doi:10.1109/EDSSC.2008.4760732

Design and analysis of 600 V power MOSFET with multiple field limiting ring

Wing-Shan Tarn
, Oi-Ying Wong
, Chi-Wah Kok
, Hei Wong

Department of Electrical Engineering

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

2 Citations (Scopus)

Abstract

This paper presents an analytical model and optimization process for multiple floating field limiting ring (MFFLR) structure pursuing high voltage blocking capability with evenly distributed electric field. The three-dimensional (3-D) model considers both the sphere-junction effect and cylindrical-junction effect, which formulates an accurate 3-D model for optimization. Design example obtained by the proposed method is examined with MEDICI simulation and consistent results are observed. © 2008 IEEE.

Original language	English
Title of host publication	2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
DOIs	https://doi.org/10.1109/EDSSC.2008.4760732
Publication status	Published - 2008
Event	2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC - Hong Kong, China Duration: 8 Dec 2008 → 10 Dec 2008

Conference

Conference	2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
Place	China
City	Hong Kong
Period	8/12/08 → 10/12/08

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10.1109/EDSSC.2008.4760732

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@inproceedings{100d88b416c1457795159d98c7a81c0b,

title = "Design and analysis of 600 V power MOSFET with multiple field limiting ring",

abstract = "This paper presents an analytical model and optimization process for multiple floating field limiting ring (MFFLR) structure pursuing high voltage blocking capability with evenly distributed electric field. The three-dimensional (3-D) model considers both the sphere-junction effect and cylindrical-junction effect, which formulates an accurate 3-D model for optimization. Design example obtained by the proposed method is examined with MEDICI simulation and consistent results are observed. {\textcopyright} 2008 IEEE.",

author = "Wing-Shan Tarn and Oi-Ying Wong and Chi-Wah Kok and Hei Wong",

year = "2008",

doi = "10.1109/EDSSC.2008.4760732",

language = "English",

isbn = "9781424425402",

booktitle = "2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC",

note = "2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC ; Conference date: 08-12-2008 Through 10-12-2008",

}

Tarn, W-S, Wong, O-Y, Kok, C-W & Wong, H 2008, Design and analysis of 600 V power MOSFET with multiple field limiting ring. in 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC., 4760732, 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC, Hong Kong, China, 8/12/08. https://doi.org/10.1109/EDSSC.2008.4760732

Design and analysis of 600 V power MOSFET with multiple field limiting ring. / Tarn, Wing-Shan; Wong, Oi-Ying; Kok, Chi-Wah et al.
2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC. 2008. 4760732.

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - Design and analysis of 600 V power MOSFET with multiple field limiting ring

AU - Tarn, Wing-Shan

AU - Wong, Oi-Ying

AU - Kok, Chi-Wah

AU - Wong, Hei

PY - 2008

Y1 - 2008

N2 - This paper presents an analytical model and optimization process for multiple floating field limiting ring (MFFLR) structure pursuing high voltage blocking capability with evenly distributed electric field. The three-dimensional (3-D) model considers both the sphere-junction effect and cylindrical-junction effect, which formulates an accurate 3-D model for optimization. Design example obtained by the proposed method is examined with MEDICI simulation and consistent results are observed. © 2008 IEEE.

AB - This paper presents an analytical model and optimization process for multiple floating field limiting ring (MFFLR) structure pursuing high voltage blocking capability with evenly distributed electric field. The three-dimensional (3-D) model considers both the sphere-junction effect and cylindrical-junction effect, which formulates an accurate 3-D model for optimization. Design example obtained by the proposed method is examined with MEDICI simulation and consistent results are observed. © 2008 IEEE.

UR - https://www.scopus.com/pages/publications/63249093679

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-63249093679&origin=recordpage

U2 - 10.1109/EDSSC.2008.4760732

DO - 10.1109/EDSSC.2008.4760732

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 9781424425402

BT - 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC

T2 - 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC

Y2 - 8 December 2008 through 10 December 2008

ER -

Design and analysis of 600 V power MOSFET with multiple field limiting ring

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