Deprotecting thioacetyl-terminated terphenyldithiol for assembly on gallium arsenide

Dmitry A. Krapchetov, Hong Ma, Alex K. Y. Jen, Daniel A. Fischer, Yueh-Lin Loo*

*Corresponding author for this work

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

15 Citations (Scopus)

Abstract

We characterize the assembly of terphenyldithiol (TPDT) on gallium arsenide (GaAs) from ethanol (EtOH) and tetrahydrofuran (THF) as a function of ammonium hydroxide (NH4OH) concentration. NH4OH facilitates the conversion of thioacetyl end groups of the TPDT precursor to thiolates in the assembly solution. The final structure of TPDT assembled on GaAs is sensitive not only to the assembly solvent but also to NH4OH concentration. In the presence of low concentrations of NH4OH (1 mM), TPDT assemblies from EtOH are oriented upright. The same assemblies are less upright when adsorption is carried out at higher NH4OH concentrations. In THF, TPDT does not adsorb significantly on GaAs at low NH4OH concentrations. The surface coverage and structural organization of these assemblies improve with increasing NH4OH concentrations, although these assemblies are never as organized as those from EtOH. The difference in the final structure of TPDT assemblies is attributed to differences in the thiolate fraction in the assembly solution at the point of substrate immersion. © 2008 American Chemical Society.
Original languageEnglish
Pages (from-to)851-856
JournalLangmuir
Volume24
Issue number3
DOIs
Publication statusPublished - 5 Feb 2008
Externally publishedYes

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