Deposition of osmium thin films using pyrazolate complexes as CVD source reagents

Yun Chi; Huan-Li Yu; Wei-Li Ching; Chao-Shiuan Liu; Yao-Lun Chen; Tsung-Yi Chou; Shie-Ming Peng; Gene-Hsiang Lee

doi:10.1039/b109150f

Deposition of osmium thin films using pyrazolate complexes as CVD source reagents

Yun Chi
, Huan-Li Yu
, Wei-Li Ching
, Chao-Shiuan Liu
, Yao-Lun Chen
, Tsung-Yi Chou
, Shie-Ming Peng
, Gene-Hsiang Lee

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

34 Citations (Scopus)

Abstract

The reaction of Os₃(CO)₁₂ with 1.2 eq. of pyrazole (3,5-(CF₃)₂-pz)H at 190°C affords triosmium complex Os₃(CO)₁₀(3,5-(CF₃)₂-pz)(μ-H) (1) as the isolable product. Upon further treatment with excess pyrazole (3,5-(CF₃)₂-pz)H under more forcing conditions, complex 1 converts to a diosmium pyrazolate complex [Os(CO)₃(3,5-(CF₃)₂-pz)]₂ (2) in high yield. These osmium complexes are characterized by spectroscopic methods and single crystal X-ray diffraction study, showing the expected triangular and linear Os-Os backbone and with one and two bridging pyrazolate ligands for complexes 1 and 2, respectively. The thermal properties are studied by TG analysis and the deposition experiments are carried out using a cold-wall CVD apparatus. The as-deposited thin films are characterized using XPS, XRD and SEM and electrical resistivity measurement. It seems that the Os metal thin films are best deposited at an optimal temperature of 450-500°C and using complex 2 as the source reagent.

Original language	English
Pages (from-to)	1363-1369
Journal	Journal of Materials Chemistry
Volume	12
Issue number	5
Online published	22 Mar 2002
DOIs	https://doi.org/10.1039/b109150f
Publication status	Published - 2002
Externally published	Yes

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title = "Deposition of osmium thin films using pyrazolate complexes as CVD source reagents",

abstract = "The reaction of Os3(CO)12 with 1.2 eq. of pyrazole (3,5-(CF3)2-pz)H at 190°C affords triosmium complex Os3(CO)10(3,5-(CF3)2-pz)(μ-H) (1) as the isolable product. Upon further treatment with excess pyrazole (3,5-(CF3)2-pz)H under more forcing conditions, complex 1 converts to a diosmium pyrazolate complex [Os(CO)3(3,5-(CF3)2-pz)]2 (2) in high yield. These osmium complexes are characterized by spectroscopic methods and single crystal X-ray diffraction study, showing the expected triangular and linear Os-Os backbone and with one and two bridging pyrazolate ligands for complexes 1 and 2, respectively. The thermal properties are studied by TG analysis and the deposition experiments are carried out using a cold-wall CVD apparatus. The as-deposited thin films are characterized using XPS, XRD and SEM and electrical resistivity measurement. It seems that the Os metal thin films are best deposited at an optimal temperature of 450-500°C and using complex 2 as the source reagent.",

author = "Yun Chi and Huan-Li Yu and Wei-Li Ching and Chao-Shiuan Liu and Yao-Lun Chen and Tsung-Yi Chou and Shie-Ming Peng and Gene-Hsiang Lee",

year = "2002",

doi = "10.1039/b109150f",

language = "English",

volume = "12",

pages = "1363--1369",

journal = "Journal of Materials Chemistry",

issn = "0959-9428",

publisher = "Royal Society of Chemistry",

number = "5",

}

TY - JOUR

T1 - Deposition of osmium thin films using pyrazolate complexes as CVD source reagents

AU - Chi, Yun

AU - Yu, Huan-Li

AU - Ching, Wei-Li

AU - Liu, Chao-Shiuan

AU - Chen, Yao-Lun

AU - Chou, Tsung-Yi

AU - Peng, Shie-Ming

AU - Lee, Gene-Hsiang

PY - 2002

Y1 - 2002

N2 - The reaction of Os3(CO)12 with 1.2 eq. of pyrazole (3,5-(CF3)2-pz)H at 190°C affords triosmium complex Os3(CO)10(3,5-(CF3)2-pz)(μ-H) (1) as the isolable product. Upon further treatment with excess pyrazole (3,5-(CF3)2-pz)H under more forcing conditions, complex 1 converts to a diosmium pyrazolate complex [Os(CO)3(3,5-(CF3)2-pz)]2 (2) in high yield. These osmium complexes are characterized by spectroscopic methods and single crystal X-ray diffraction study, showing the expected triangular and linear Os-Os backbone and with one and two bridging pyrazolate ligands for complexes 1 and 2, respectively. The thermal properties are studied by TG analysis and the deposition experiments are carried out using a cold-wall CVD apparatus. The as-deposited thin films are characterized using XPS, XRD and SEM and electrical resistivity measurement. It seems that the Os metal thin films are best deposited at an optimal temperature of 450-500°C and using complex 2 as the source reagent.

AB - The reaction of Os3(CO)12 with 1.2 eq. of pyrazole (3,5-(CF3)2-pz)H at 190°C affords triosmium complex Os3(CO)10(3,5-(CF3)2-pz)(μ-H) (1) as the isolable product. Upon further treatment with excess pyrazole (3,5-(CF3)2-pz)H under more forcing conditions, complex 1 converts to a diosmium pyrazolate complex [Os(CO)3(3,5-(CF3)2-pz)]2 (2) in high yield. These osmium complexes are characterized by spectroscopic methods and single crystal X-ray diffraction study, showing the expected triangular and linear Os-Os backbone and with one and two bridging pyrazolate ligands for complexes 1 and 2, respectively. The thermal properties are studied by TG analysis and the deposition experiments are carried out using a cold-wall CVD apparatus. The as-deposited thin films are characterized using XPS, XRD and SEM and electrical resistivity measurement. It seems that the Os metal thin films are best deposited at an optimal temperature of 450-500°C and using complex 2 as the source reagent.

UR - https://www.scopus.com/pages/publications/0036096259

UR - https://www.scopus.com/pages/publications/0036096259#tab=impact

U2 - 10.1039/b109150f

DO - 10.1039/b109150f

M3 - RGC 21 - Publication in refereed journal

SN - 0959-9428

VL - 12

SP - 1363

EP - 1369

JO - Journal of Materials Chemistry

JF - Journal of Materials Chemistry

IS - 5

ER -

Deposition of osmium thin films using pyrazolate complexes as CVD source reagents

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