Deposition of osmium thin films using pyrazolate complexes as CVD source reagents

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Huan-Li Yu
  • Wei-Li Ching
  • Chao-Shiuan Liu
  • Yao-Lun Chen
  • Tsung-Yi Chou
  • Shie-Ming Peng
  • Gene-Hsiang Lee

Detail(s)

Original languageEnglish
Pages (from-to)1363-1369
Journal / PublicationJournal of Materials Chemistry
Volume12
Issue number5
Online published22 Mar 2002
Publication statusPublished - 2002
Externally publishedYes

Abstract

The reaction of Os3(CO)12 with 1.2 eq. of pyrazole (3,5-(CF3)2-pz)H at 190°C affords triosmium complex Os3(CO)10(3,5-(CF3)2-pz)(μ-H) (1) as the isolable product. Upon further treatment with excess pyrazole (3,5-(CF3)2-pz)H under more forcing conditions, complex 1 converts to a diosmium pyrazolate complex [Os(CO)3(3,5-(CF3)2-pz)]2 (2) in high yield. These osmium complexes are characterized by spectroscopic methods and single crystal X-ray diffraction study, showing the expected triangular and linear Os-Os backbone and with one and two bridging pyrazolate ligands for complexes 1 and 2, respectively. The thermal properties are studied by TG analysis and the deposition experiments are carried out using a cold-wall CVD apparatus. The as-deposited thin films are characterized using XPS, XRD and SEM and electrical resistivity measurement. It seems that the Os metal thin films are best deposited at an optimal temperature of 450-500°C and using complex 2 as the source reagent.

Citation Format(s)

Deposition of osmium thin films using pyrazolate complexes as CVD source reagents. / Chi, Yun; Yu, Huan-Li; Ching, Wei-Li; Liu, Chao-Shiuan; Chen, Yao-Lun; Chou, Tsung-Yi; Peng, Shie-Ming; Lee, Gene-Hsiang.

In: Journal of Materials Chemistry, Vol. 12, No. 5, 2002, p. 1363-1369.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review