Deposition of large-area, high-quality cubic boron nitride films by ECR-enhanced microwave-plasma CVD

W. J. Zhang; C. Y. Chan; K. M. Chan; I. Bello; Y. Lifshitz; S. T. Lee

doi:10.1007/s00339-002-1486-5

Deposition of large-area, high-quality cubic boron nitride films by ECR-enhanced microwave-plasma CVD

W. J. Zhang
, C. Y. Chan
, K. M. Chan
, I. Bello
, Y. Lifshitz
, S. T. Lee

Centre of Super-Diamond and Advanced Films

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

39 Citations (Scopus)

Abstract

Large-area, 1-μm-thick cubic boron nitride (cBN) films were deposited on (001) silicon substrates by electron-cyclotron-resonance-enhanced microwave-plasma chemical vapor deposition (ECR-MP CVD) in a mixture of He-Ar-N₂-BF₃-H₂ gases. With the assistance of fluorine chemistry in the gas phase and substrate reactions, the phase purity of the sp³ -configuration was improved to over 85% at a reduced substrate bias voltage of -40V. The grown films show clear Raman transversal optical (TO) and longitudinal optical (LO) phonon vibration modes, characteristic of cBN. Such Raman spectral characteristics are the first ever observed in cBN films prepared under ECR-MP CVD conditions.

Original language	English
Pages (from-to)	953-955
Journal	Applied Physics A: Materials Science and Processing
Volume	76
Issue number	6
DOIs	https://doi.org/10.1007/s00339-002-1486-5
Publication status	Published - Apr 2003

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@article{1c984a9a094c4946862d8df506395a76,

title = "Deposition of large-area, high-quality cubic boron nitride films by ECR-enhanced microwave-plasma CVD",

abstract = "Large-area, 1-μm-thick cubic boron nitride (cBN) films were deposited on (001) silicon substrates by electron-cyclotron-resonance-enhanced microwave-plasma chemical vapor deposition (ECR-MP CVD) in a mixture of He-Ar-N2-BF3-H2 gases. With the assistance of fluorine chemistry in the gas phase and substrate reactions, the phase purity of the sp3 -configuration was improved to over 85\% at a reduced substrate bias voltage of -40V. The grown films show clear Raman transversal optical (TO) and longitudinal optical (LO) phonon vibration modes, characteristic of cBN. Such Raman spectral characteristics are the first ever observed in cBN films prepared under ECR-MP CVD conditions.",

author = "Zhang, \{W. J.\} and Chan, \{C. Y.\} and Chan, \{K. M.\} and I. Bello and Y. Lifshitz and Lee, \{S. T.\}",

year = "2003",

month = apr,

doi = "10.1007/s00339-002-1486-5",

language = "English",

volume = "76",

pages = "953--955",

journal = "Applied Physics A: Materials Science and Processing",

issn = "1996-0948",

publisher = "Springer Heidelberg",

number = "6",

}

TY - JOUR

T1 - Deposition of large-area, high-quality cubic boron nitride films by ECR-enhanced microwave-plasma CVD

AU - Zhang, W. J.

AU - Chan, C. Y.

AU - Chan, K. M.

AU - Bello, I.

AU - Lifshitz, Y.

AU - Lee, S. T.

PY - 2003/4

Y1 - 2003/4

N2 - Large-area, 1-μm-thick cubic boron nitride (cBN) films were deposited on (001) silicon substrates by electron-cyclotron-resonance-enhanced microwave-plasma chemical vapor deposition (ECR-MP CVD) in a mixture of He-Ar-N2-BF3-H2 gases. With the assistance of fluorine chemistry in the gas phase and substrate reactions, the phase purity of the sp3 -configuration was improved to over 85% at a reduced substrate bias voltage of -40V. The grown films show clear Raman transversal optical (TO) and longitudinal optical (LO) phonon vibration modes, characteristic of cBN. Such Raman spectral characteristics are the first ever observed in cBN films prepared under ECR-MP CVD conditions.

AB - Large-area, 1-μm-thick cubic boron nitride (cBN) films were deposited on (001) silicon substrates by electron-cyclotron-resonance-enhanced microwave-plasma chemical vapor deposition (ECR-MP CVD) in a mixture of He-Ar-N2-BF3-H2 gases. With the assistance of fluorine chemistry in the gas phase and substrate reactions, the phase purity of the sp3 -configuration was improved to over 85% at a reduced substrate bias voltage of -40V. The grown films show clear Raman transversal optical (TO) and longitudinal optical (LO) phonon vibration modes, characteristic of cBN. Such Raman spectral characteristics are the first ever observed in cBN films prepared under ECR-MP CVD conditions.

UR - https://www.scopus.com/pages/publications/0037390571

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0037390571&origin=recordpage

U2 - 10.1007/s00339-002-1486-5

DO - 10.1007/s00339-002-1486-5

M3 - RGC 21 - Publication in refereed journal

SN - 1996-0948

VL - 76

SP - 953

EP - 955

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

IS - 6

ER -

Deposition of large-area, high-quality cubic boron nitride films by ECR-enhanced microwave-plasma CVD

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