Deposition of heteroepitaxial diamond on 6H-SiC single crystal by bias-enhanced microwave plasma chemical vapor deposition

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Author(s)

Detail(s)

Original languageEnglish
Pages (from-to)283-289
Journal / PublicationDiamond and Related Materials
Volume9
Issue number3-6
Publication statusPublished - Apr 2000
Externally publishedYes

Conference

Title10th European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide
CityPrague, Czech Republic
Period12 - 17 September 1999

Abstract

Deposition of heteroepitaxial diamond on substrates of 6H-SiC single crystal by a d.c. voltage biased-enhanced microwave plasma chemical vapor deposition method has been attempted. Various concentrations of methane (CH4) up to 10% in hydrogen (H2) was used to evaluate its effect on epitaxy. Characterization of cross-sectional transmission electron microscopy with electron energy loss spectroscopy shows that an interlayer can form between diamond 6H-SiC, depending on the CH4 concentration. With low CH4 concentration, diamond was directly nucleated on 6H-SiC with an orientation relationship of diamond {111}//6H-SiC {0001} and diamond //6H-SiC . (C) 2000 Elsevier Science S.A. All rights reserved.

Research Area(s)

  • Bias, Heteroepitaxy, Silicon carbide, Transmission electron microscopy