Dependence of photoluminescence of ZnO/Zn0.85Mg0.15O multi-quantum wells on barrier width

Xiuquan Gu; Haiping He; Liping Zhu; Zhizhen Ye; Kaifu Huo; Paul K. Chu

doi:10.1016/j.physleta.2009.07.011

Dependence of photoluminescence of ZnO/Zn_0.85Mg_0.15O multi-quantum wells on barrier width

Xiuquan Gu, Haiping He, Liping Zhu, Zhizhen Ye, Kaifu Huo, Paul K. Chu

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

9 Citations (Scopus)

Abstract

Temperature-dependent photoluminescence (PL) from two multi-quantum well (MQW) structures with different barrier widths has been systematically investigated. The PL band in the well layers is dominated by localized excitons (LE), D⁰X, and D⁰X-1LO. As the temperature increases, luminescence from the excitons localized in the well layers shows an 'S'-shaped shift in the thin barrier MQW whereas a monotonic redshift is observed from the thick barrier MQW. Quenching of well-related emission is associated with delocalization of the excitons in the potential minima induced by interface fluctuations or alloy disorder. The activation energies correlated with depths of the local potential are deduced to be 7 and 17 meV for the thick and thin barrier MQWs, respectively. © 2009 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	3281-3284
Journal	Physics Letters, Section A: General, Atomic and Solid State Physics
Volume	373
Issue number	36
DOIs	https://doi.org/10.1016/j.physleta.2009.07.011
Publication status	Published - 31 Aug 2009

Research Keywords

Exciton emission
Localization
MQW
Photoluminescence

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@article{2104fb0272974455b98b853cc9aade01,

title = "Dependence of photoluminescence of ZnO/Zn0.85Mg0.15O multi-quantum wells on barrier width",

abstract = "Temperature-dependent photoluminescence (PL) from two multi-quantum well (MQW) structures with different barrier widths has been systematically investigated. The PL band in the well layers is dominated by localized excitons (LE), D0X, and D0X-1LO. As the temperature increases, luminescence from the excitons localized in the well layers shows an 'S'-shaped shift in the thin barrier MQW whereas a monotonic redshift is observed from the thick barrier MQW. Quenching of well-related emission is associated with delocalization of the excitons in the potential minima induced by interface fluctuations or alloy disorder. The activation energies correlated with depths of the local potential are deduced to be 7 and 17 meV for the thick and thin barrier MQWs, respectively. {\textcopyright} 2009 Elsevier B.V. All rights reserved.",

keywords = "Exciton emission, Localization, MQW, Photoluminescence",

author = "Xiuquan Gu and Haiping He and Liping Zhu and Zhizhen Ye and Kaifu Huo and Chu, {Paul K.}",

year = "2009",

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doi = "10.1016/j.physleta.2009.07.011",

language = "English",

volume = "373",

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journal = "Physics Letters, Section A: General, Atomic and Solid State Physics",

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TY - JOUR

T1 - Dependence of photoluminescence of ZnO/Zn0.85Mg0.15O multi-quantum wells on barrier width

AU - Gu, Xiuquan

AU - He, Haiping

AU - Zhu, Liping

AU - Ye, Zhizhen

AU - Huo, Kaifu

AU - Chu, Paul K.

PY - 2009/8/31

Y1 - 2009/8/31

N2 - Temperature-dependent photoluminescence (PL) from two multi-quantum well (MQW) structures with different barrier widths has been systematically investigated. The PL band in the well layers is dominated by localized excitons (LE), D0X, and D0X-1LO. As the temperature increases, luminescence from the excitons localized in the well layers shows an 'S'-shaped shift in the thin barrier MQW whereas a monotonic redshift is observed from the thick barrier MQW. Quenching of well-related emission is associated with delocalization of the excitons in the potential minima induced by interface fluctuations or alloy disorder. The activation energies correlated with depths of the local potential are deduced to be 7 and 17 meV for the thick and thin barrier MQWs, respectively. © 2009 Elsevier B.V. All rights reserved.

AB - Temperature-dependent photoluminescence (PL) from two multi-quantum well (MQW) structures with different barrier widths has been systematically investigated. The PL band in the well layers is dominated by localized excitons (LE), D0X, and D0X-1LO. As the temperature increases, luminescence from the excitons localized in the well layers shows an 'S'-shaped shift in the thin barrier MQW whereas a monotonic redshift is observed from the thick barrier MQW. Quenching of well-related emission is associated with delocalization of the excitons in the potential minima induced by interface fluctuations or alloy disorder. The activation energies correlated with depths of the local potential are deduced to be 7 and 17 meV for the thick and thin barrier MQWs, respectively. © 2009 Elsevier B.V. All rights reserved.

KW - Exciton emission

KW - Localization

KW - MQW

KW - Photoluminescence

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UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-68349105777&origin=recordpage

U2 - 10.1016/j.physleta.2009.07.011

DO - 10.1016/j.physleta.2009.07.011

M3 - RGC 21 - Publication in refereed journal

SN - 0375-9601

VL - 373

SP - 3281

EP - 3284

JO - Physics Letters, Section A: General, Atomic and Solid State Physics

JF - Physics Letters, Section A: General, Atomic and Solid State Physics

IS - 36

ER -