Dependence of photoluminescence of ZnO/Zn0.85Mg0.15O multi-quantum wells on barrier width
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Detail(s)
Original language | English |
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Pages (from-to) | 3281-3284 |
Journal / Publication | Physics Letters, Section A: General, Atomic and Solid State Physics |
Volume | 373 |
Issue number | 36 |
Publication status | Published - 31 Aug 2009 |
Link(s)
Abstract
Temperature-dependent photoluminescence (PL) from two multi-quantum well (MQW) structures with different barrier widths has been systematically investigated. The PL band in the well layers is dominated by localized excitons (LE), D0X, and D0X-1LO. As the temperature increases, luminescence from the excitons localized in the well layers shows an 'S'-shaped shift in the thin barrier MQW whereas a monotonic redshift is observed from the thick barrier MQW. Quenching of well-related emission is associated with delocalization of the excitons in the potential minima induced by interface fluctuations or alloy disorder. The activation energies correlated with depths of the local potential are deduced to be 7 and 17 meV for the thick and thin barrier MQWs, respectively. © 2009 Elsevier B.V. All rights reserved.
Research Area(s)
- Exciton emission, Localization, MQW, Photoluminescence
Citation Format(s)
Dependence of photoluminescence of ZnO/Zn0.85Mg0.15O multi-quantum wells on barrier width. / Gu, Xiuquan; He, Haiping; Zhu, Liping et al.
In: Physics Letters, Section A: General, Atomic and Solid State Physics, Vol. 373, No. 36, 31.08.2009, p. 3281-3284.
In: Physics Letters, Section A: General, Atomic and Solid State Physics, Vol. 373, No. 36, 31.08.2009, p. 3281-3284.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review