Dependence of photoluminescence of ZnO/Zn0.85Mg0.15O multi-quantum wells on barrier width

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Xiuquan Gu
  • Haiping He
  • Liping Zhu
  • Zhizhen Ye
  • Kaifu Huo

Detail(s)

Original languageEnglish
Pages (from-to)3281-3284
Journal / PublicationPhysics Letters, Section A: General, Atomic and Solid State Physics
Volume373
Issue number36
Publication statusPublished - 31 Aug 2009

Abstract

Temperature-dependent photoluminescence (PL) from two multi-quantum well (MQW) structures with different barrier widths has been systematically investigated. The PL band in the well layers is dominated by localized excitons (LE), D0X, and D0X-1LO. As the temperature increases, luminescence from the excitons localized in the well layers shows an 'S'-shaped shift in the thin barrier MQW whereas a monotonic redshift is observed from the thick barrier MQW. Quenching of well-related emission is associated with delocalization of the excitons in the potential minima induced by interface fluctuations or alloy disorder. The activation energies correlated with depths of the local potential are deduced to be 7 and 17 meV for the thick and thin barrier MQWs, respectively. © 2009 Elsevier B.V. All rights reserved.

Research Area(s)

  • Exciton emission, Localization, MQW, Photoluminescence

Citation Format(s)