Dependence of Electrical Properties on Thermal Temperature in Nanocrystalling SnO2 Thin Films

J. Du; H. J. Zhang; Z. Jiao; M. H. Wu; C. H. Shek; C. M. L. Wu; J. K. L. Lai; Z. W. Chen

doi:10.1109/INEC.2010.5424650

Dependence of Electrical Properties on Thermal Temperature in Nanocrystalling SnO₂ Thin Films

J. Du
, H. J. Zhang
, Z. Jiao
, M. H. Wu
, C. H. Shek
, C. M. L. Wu
, J. K. L. Lai
, Z. W. Chen

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

Abstract

Nanocrystalline SnO₂ thin films were prepared by pulsed laser deposition techniques on clean glass substrates, and the films were then annealed for 30 min from 50 to 550 °C with a step of 50 °C, respectively. The investigation of X-ray diffraction confirmed that the various SnO₂ thin films were consisted of nanoparticles with average grain size in the range of 23.7-28.9 nm. Root-mean-square surface roughness of the as-prepared SnO₂ thin film was measured to be 25.6 nm which decreases to 16.2 nm with thermal annealing. Electrical resistivity and refractive index were measured as a function of annealing temperature, and found to lie between 1.24 to 1.45 mΩ-cm, and 1.502 to 1.349, respectively. The results indicate that nearly opposite actions to root-mean-square surface roughness and electrical resistivity make a unique performance with thermal annealing temperature. The post annealing shows greater tendency to affect the structural and electrical properties of SnO₂ thin films which composed of nanoparticles.

Original language	English
Title of host publication	INEC 2010 - 2010 3^rd International Nanoelectronics Conference, Proceedings
Editors	Paul K. Chu
Publisher	IEEE
Pages	670-671
ISBN (Print)	9781424435449
DOIs	https://doi.org/10.1109/INEC.2010.5424650
Publication status	Published - Jan 2010
Event	3rd IEEE International NanoElectronics Conference (INEC 2010) - City University of Hong Kong, Hong Kong, China Duration: 3 Jan 2010 → 8 Jan 2010 http://www.cityu.edu.hk/ieeeinec/

Conference

Conference	3rd IEEE International NanoElectronics Conference (INEC 2010)
Place	China
City	Hong Kong
Period	3/01/10 → 8/01/10
Internet address	http://www.cityu.edu.hk/ieeeinec/

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Du, J., Zhang, H. J., Jiao, Z., Wu, M. H., Shek, C. H., Wu, C. M. L., Lai, J. K. L., & Chen, Z. W. (2010). Dependence of Electrical Properties on Thermal Temperature in Nanocrystalling SnO₂ Thin Films. In P. K. Chu (Ed.), INEC 2010 - 2010 3^rd International Nanoelectronics Conference, Proceedings (pp. 670-671). Article 5424650 IEEE. https://doi.org/10.1109/INEC.2010.5424650

@inproceedings{8b4270c5bf6b48a1b5a100842931eedf,

title = "Dependence of Electrical Properties on Thermal Temperature in Nanocrystalling SnO2 Thin Films",

abstract = "Nanocrystalline SnO2 thin films were prepared by pulsed laser deposition techniques on clean glass substrates, and the films were then annealed for 30 min from 50 to 550 °C with a step of 50 °C, respectively. The investigation of X-ray diffraction confirmed that the various SnO2 thin films were consisted of nanoparticles with average grain size in the range of 23.7-28.9 nm. Root-mean-square surface roughness of the as-prepared SnO2 thin film was measured to be 25.6 nm which decreases to 16.2 nm with thermal annealing. Electrical resistivity and refractive index were measured as a function of annealing temperature, and found to lie between 1.24 to 1.45 mΩ-cm, and 1.502 to 1.349, respectively. The results indicate that nearly opposite actions to root-mean-square surface roughness and electrical resistivity make a unique performance with thermal annealing temperature. The post annealing shows greater tendency to affect the structural and electrical properties of SnO2 thin films which composed of nanoparticles.",

author = "J. Du and Zhang, \{H. J.\} and Z. Jiao and Wu, \{M. H.\} and Shek, \{C. H.\} and Wu, \{C. M. L.\} and Lai, \{J. K. L.\} and Chen, \{Z. W.\}",

year = "2010",

month = jan,

doi = "10.1109/INEC.2010.5424650",

language = "English",

isbn = "9781424435449",

pages = "670--671",

editor = "Chu, \{Paul K.\}",

booktitle = "INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings",

publisher = "IEEE",

address = "United States",

note = "3rd IEEE International NanoElectronics Conference (INEC 2010) ; Conference date: 03-01-2010 Through 08-01-2010",

url = "http://www.cityu.edu.hk/ieeeinec/",

}

Du, J, Zhang, HJ, Jiao, Z, Wu, MH, Shek, CH , Wu, CML , Lai, JKL & Chen, ZW 2010, Dependence of Electrical Properties on Thermal Temperature in Nanocrystalling SnO₂ Thin Films. in PK Chu (ed.), INEC 2010 - 2010 3^rd International Nanoelectronics Conference, Proceedings., 5424650, IEEE, pp. 670-671, 3rd IEEE International NanoElectronics Conference (INEC 2010), Hong Kong, China, 3/01/10. https://doi.org/10.1109/INEC.2010.5424650

Dependence of Electrical Properties on Thermal Temperature in Nanocrystalling SnO₂ Thin Films. / Du, J.; Zhang, H. J.; Jiao, Z. et al.
INEC 2010 - 2010 3^rd International Nanoelectronics Conference, Proceedings. ed. / Paul K. Chu. IEEE, 2010. p. 670-671 5424650.

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - Dependence of Electrical Properties on Thermal Temperature in Nanocrystalling SnO2 Thin Films

AU - Du, J.

AU - Zhang, H. J.

AU - Jiao, Z.

AU - Wu, M. H.

AU - Shek, C. H.

AU - Wu, C. M. L.

AU - Lai, J. K. L.

AU - Chen, Z. W.

PY - 2010/1

Y1 - 2010/1

N2 - Nanocrystalline SnO2 thin films were prepared by pulsed laser deposition techniques on clean glass substrates, and the films were then annealed for 30 min from 50 to 550 °C with a step of 50 °C, respectively. The investigation of X-ray diffraction confirmed that the various SnO2 thin films were consisted of nanoparticles with average grain size in the range of 23.7-28.9 nm. Root-mean-square surface roughness of the as-prepared SnO2 thin film was measured to be 25.6 nm which decreases to 16.2 nm with thermal annealing. Electrical resistivity and refractive index were measured as a function of annealing temperature, and found to lie between 1.24 to 1.45 mΩ-cm, and 1.502 to 1.349, respectively. The results indicate that nearly opposite actions to root-mean-square surface roughness and electrical resistivity make a unique performance with thermal annealing temperature. The post annealing shows greater tendency to affect the structural and electrical properties of SnO2 thin films which composed of nanoparticles.

AB - Nanocrystalline SnO2 thin films were prepared by pulsed laser deposition techniques on clean glass substrates, and the films were then annealed for 30 min from 50 to 550 °C with a step of 50 °C, respectively. The investigation of X-ray diffraction confirmed that the various SnO2 thin films were consisted of nanoparticles with average grain size in the range of 23.7-28.9 nm. Root-mean-square surface roughness of the as-prepared SnO2 thin film was measured to be 25.6 nm which decreases to 16.2 nm with thermal annealing. Electrical resistivity and refractive index were measured as a function of annealing temperature, and found to lie between 1.24 to 1.45 mΩ-cm, and 1.502 to 1.349, respectively. The results indicate that nearly opposite actions to root-mean-square surface roughness and electrical resistivity make a unique performance with thermal annealing temperature. The post annealing shows greater tendency to affect the structural and electrical properties of SnO2 thin films which composed of nanoparticles.

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U2 - 10.1109/INEC.2010.5424650

DO - 10.1109/INEC.2010.5424650

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 9781424435449

SP - 670

EP - 671

BT - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

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PB - IEEE

T2 - 3rd IEEE International NanoElectronics Conference (INEC 2010)

Y2 - 3 January 2010 through 8 January 2010

ER -