Demonstration of homojunction ZnTe solar cells

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

  • Tooru Tanaka
  • Peter R. Stone
  • Jeffrey W. Beeman
  • Oscar D. Dubon
  • Lothar A. Reichertz
  • Vincent M. Kao
  • Mitsuhiro Nishio
  • Wladek Walukiewicz

Detail(s)

Original languageEnglish
Article number024502
Journal / PublicationJournal of Applied Physics
Volume108
Issue number2
Publication statusPublished - 15 Jul 2010
Externally publishedYes

Abstract

We report on the proof of photovoltaic activity of homojunction ZnTe solar cells in which n-ZnTe layers are fabricated by thermal diffusion of Al into p-ZnTe at several diffusion times to control the junction depth. An open circuit voltage of approximately 0.9 V was obtained under 1× sun AM1.5G condition in all solar cells, independent of diffusion times, while a short circuit current dropped down with increasing the diffusion time due to an increased light absorption in heavily defective Al-diffused layer. These fundamental results provide a basis for future development of intermediate band solar cells based on ZnTe materials. © 2010 American Institute of Physics.

Citation Format(s)

Demonstration of homojunction ZnTe solar cells. / Tanaka, Tooru; Yu, Kin M.; Stone, Peter R. et al.
In: Journal of Applied Physics, Vol. 108, No. 2, 024502, 15.07.2010.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review