Demonstration of homojunction ZnTe solar cells
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Detail(s)
Original language | English |
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Article number | 024502 |
Journal / Publication | Journal of Applied Physics |
Volume | 108 |
Issue number | 2 |
Publication status | Published - 15 Jul 2010 |
Externally published | Yes |
Link(s)
Abstract
We report on the proof of photovoltaic activity of homojunction ZnTe solar cells in which n-ZnTe layers are fabricated by thermal diffusion of Al into p-ZnTe at several diffusion times to control the junction depth. An open circuit voltage of approximately 0.9 V was obtained under 1× sun AM1.5G condition in all solar cells, independent of diffusion times, while a short circuit current dropped down with increasing the diffusion time due to an increased light absorption in heavily defective Al-diffused layer. These fundamental results provide a basis for future development of intermediate band solar cells based on ZnTe materials. © 2010 American Institute of Physics.
Research Area(s)
Citation Format(s)
Demonstration of homojunction ZnTe solar cells. / Tanaka, Tooru; Yu, Kin M.; Stone, Peter R. et al.
In: Journal of Applied Physics, Vol. 108, No. 2, 024502, 15.07.2010.
In: Journal of Applied Physics, Vol. 108, No. 2, 024502, 15.07.2010.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review