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Deformation induced microtwins and stacking faults in aluminum single crystal

  • W. Z. Han
  • , G. M. Cheng
  • , S. X. Li
  • , S. D. Wu
  • , Z. F. Zhang

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

Abstract

Microtwins and stacking faults in plastically deformed aluminum single crystal were successfully observed by high-resolution transmission electron microscope. The occurrence of these microtwins and stacking faults is directly related to the specially designed crystallographic orientation, because they were not observed in pure aluminum single crystal or polycrystal before. Based on the new finding above, we propose a universal dislocation-based model to judge the preference or not for the nucleation of deformation twins and stacking faults in various face-centered-cubic metals in terms of the critical stress for dislocation glide or twinning by considering the intrinsic factors, such as stacking fault energy, crystallographic orientation, and grain size. The new finding of deformation induced microtwins and stacking faults in aluminum single crystal and the proposed model should be of interest to a broad community. © 2008 The American Physical Society.
Original languageEnglish
Article number115505
JournalPhysical Review Letters
Volume101
Issue number11
DOIs
Publication statusPublished - 11 Sept 2008
Externally publishedYes

Bibliographical note

Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

Funding

This work was supported by the National Natural Science Foundation of China (NSFC) under Grants No. 50371090, No. 50171072, and No. 50571102. Z. F. Z. would like to acknowledge the financial support of “Hundred of Talents Project” by the Chinese Academy of Sciences and the National Outstanding Young Scientist Investigation under Grant No. 50625103.

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