Defects in silicon oxynitride gate dielectric films

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Original languageEnglish
Pages (from-to)597-605
Journal / PublicationMicroelectronics Reliability
Volume42
Issue number4-5
Publication statusPublished - Apr 2002

Abstract

As the aggressive scaling of the metal-oxide-semiconductor structure continues, new reliability challenges in gate dielectric materials now came across as the gate dielectric thickness will be further down scaled to its technological constraint (•, ≡Si-O-O, ≡Si2N), diamagnetic defects (≡Si-Si≡, =N-H), dicoordinated Si center (=Si:) and neutral defects (≡SiO, ≡SiOH, ≡Si-O-O-Si≡) are discussed in detail based on both the experimental and simulation results. © 2002 Elsevier Science Ltd. All rights reserved.

Citation Format(s)

Defects in silicon oxynitride gate dielectric films. / Wong, Hei; Gritsenko, V. A.

In: Microelectronics Reliability, Vol. 42, No. 4-5, 04.2002, p. 597-605.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review