Defects in silicon oxynitride gate dielectric films
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Author(s)
Related Research Unit(s)
Detail(s)
| Original language | English |
|---|---|
| Pages (from-to) | 597-605 |
| Journal / Publication | Microelectronics Reliability |
| Volume | 42 |
| Issue number | 4-5 |
| Publication status | Published - Apr 2002 |
Link(s)
Abstract
As the aggressive scaling of the metal-oxide-semiconductor structure continues, new reliability challenges in gate dielectric materials now came across as the gate dielectric thickness will be further down scaled to its technological constraint (•, ≡Si-O-O•, ≡Si2N•), diamagnetic defects (≡Si-Si≡, =N-H), dicoordinated Si center (=Si:) and neutral defects (≡SiO•, ≡SiOH, ≡Si-O-O-Si≡) are discussed in detail based on both the experimental and simulation results. © 2002 Elsevier Science Ltd. All rights reserved.
Citation Format(s)
Defects in silicon oxynitride gate dielectric films. / Wong, Hei; Gritsenko, V. A.
In: Microelectronics Reliability, Vol. 42, No. 4-5, 04.2002, p. 597-605.Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
