Defect-minimized SiGe layer using ion beam synthesis

Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45)32_Refereed conference paper (with ISBN/ISSN)

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Author(s)

  • Seongil Im
  • Jack Washburn
  • Ronald Gronsky
  • Nathan W. Cheung
  • Kin Man Yu

Detail(s)

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
PublisherPubl by Materials Research Society
Pages249-254
Volume279
ISBN (Print)1558991743
Publication statusPublished - 1993
Externally publishedYes

Publication series

Name
Volume279
ISSN (Electronic)0272-9172

Conference

TitleBeam Solid Interactions: Fundamentals and Applications
CityBoston, MA, USA
Period30 November - 4 December 1992

Abstract

Ion Beam Synthesis for SiGe layers was performed to study the end-of-range(EOR) defects and strain-induced dislocations. High Ge doses of 5×1016/cm2, 3×1016/cm2 and 2×1016/cm2 at 120 keV were implanted to obtain 12 at%, 7 at% and 5 at% of Ge peak concentrations respectively. RBS spectra show a projected range(Rp) at a depth of 65nm and an amorphous thickness of 170nm on a wafer with 12 at% of Ge peak concentration. Ge ion implantation was performed both at room temperature(RT) and at liquid nitrogen temperature(LNT), in order to investigate the effect of implantation temperature on reducing EOR defect density. Solid phase epitaxial(SPE) annealing for all SiGe layers was done in nitrogen ambient at 800°C. The EOR defect density is considerably reduced by LNT implantation and the strain-induced dislocations have a threshold Ge peak concentration(about 6 at%) for their abrupt generation. For SiGe layer with 12 at% Ge peak concentration, the amorphous-crystalline(a/c) interfacial morphology changes from a planar interface into a faceted interface during SPE growth at 550°C.

Citation Format(s)

Defect-minimized SiGe layer using ion beam synthesis. / Im, Seongil; Washburn, Jack; Gronsky, Ronald; Cheung, Nathan W.; Yu, Kin Man.

Materials Research Society Symposium Proceedings. Vol. 279 Publ by Materials Research Society, 1993. p. 249-254.

Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45)32_Refereed conference paper (with ISBN/ISSN)