Defect-rich selenium doped graphitic carbon nitride for high-efficiency hydrogen evolution photocatalysis

Qichao Zhang, Yajie Sun, Jiguang Deng, Yuxi Liu, Yun Hau Ng*, Lin Jing*, Hongxing Dai

*Corresponding author for this work

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

8 Citations (Scopus)

Abstract

Graphitic carbon nitride (g-C3N4) has been demonstrated as a promising non-metal material for photocatalytic hydrogen evolution (PHE), while its photocatalytic activity is greatly limited due to the narrow visible light response-ability and the intrinsic severe charge deep trapping and recombination effects. Herein, a co-functionalized g-C3N4 system by Se doping and nitrogen vacancies modification is developed through a Se vapor-assisted-chemical vapor deposition synthetic strategy. Advanced characterization results revealed that Se dopants promote the visible-light absorption ability of g-C3N4, while nitrogen defects-induced shallow trap states are constructive to improving charge separation/transportation efficiency by effectively retarding the detrimental charge deep trapping and recombination. As a result, the synergistic effect of the Se dopants and nitrogen defects leads to a highly efficient PHE performance of g-C3N4. The integrated engineering strategy and mechanism understanding provided in this work may offer new insights into developing other novel photocatalysts for various applications. © 2023 Hydrogen Energy Publications LLC.
Original languageEnglish
Pages (from-to)31590-31598
JournalInternational Journal of Hydrogen Energy
Volume48
Issue number81
Online published13 May 2023
DOIs
Publication statusPublished - 22 Sept 2023

Research Keywords

  • Graphitic carbon nitride
  • Nitrogen vacancies
  • Photocatalytic hydrogen evolution
  • Selenium doping

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