Abstract
Metal oxide semiconductor (MOS) capacitors were fabricated with nitrided and non-nitrided sputtered oxides. The MOS structures were exposed to 2 Mrad gamma-ray dose and stored in a dry ambient for one year. Post-irradiation stability of MOS capacitors was investigated by applying Fowler-Nordheim constant current stress and monitoring the positive charge, border traps and interface states generation. It was found that nitridation increased the resistance of sputtered oxides to various defects generation under irradiation, electrical and combined radiation-electrical stress. The improved stability is explained in part by compensation of oxygen vacancy defects and Pb centers by nitrogen. © 2012 Elsevier B.V. All rights reserved.
| Original language | English |
|---|---|
| Pages (from-to) | 90-94 |
| Journal | Microelectronic Engineering |
| Volume | 104 |
| DOIs | |
| Publication status | Published - 2013 |
Bibliographical note
Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].Funding
This work was supported by the Hong Kong Polytechnic University and the Ministry of Science and Technology Development of Republic of Serbia (Number 04311 ).
Research Keywords
- Gamma radiation
- Nitrided oxide
- Oxide defects
- Silicon oxide
- Sputtered oxide
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