Deep-depletion-layer impact-ionization-induced gate-oxide breakdown in thin-oxide n-MOSFETs

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • M. Q. Huang
  • P. T. Lai
  • Z. J. Ma
  • H. Wong
  • Y. C. Cheng

Related Research Unit(s)

Detail(s)

Original languageEnglish
Pages (from-to)1155-1160
Journal / PublicationSolid State Electronics
Volume36
Issue number8
Publication statusPublished - Aug 1993

Abstract

This work extensively examines gate-oxide breakdown behaviours of n-MOSFETs by means of enhancement-type and depletion-type devices with various channel dimensions under different operation conditions. The results indicate that positive-charge accumulation in gate oxide is only one of the processes occurring during high-field stress but is not the main cause for gate-oxide breakdown. The accelerated gate-oxide breakdown in MOSFETs is initiated by interface states at the Si-SiO2 interface, which are generated from the following process: holes created by impact ionization in the deep-depletion layer of the drain are injected into the gate oxide and trapped near the Si-SiO2 interface; then they recombine with hot electrons crossing the interface. In addition, gate-oxide breakdown at the gate-and-drain overlap may lead to that between gate and source. © 1993.

Citation Format(s)

Deep-depletion-layer impact-ionization-induced gate-oxide breakdown in thin-oxide n-MOSFETs. / Huang, M. Q.; Lai, P. T.; Ma, Z. J.; Wong, H.; Cheng, Y. C.

In: Solid State Electronics, Vol. 36, No. 8, 08.1993, p. 1155-1160.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review