Deep level transient spectroscopy of hole emission from nitrided oxide/silicon interface traps

Y. H. Poon; H. Wong; K. F. Man

doi:10.1109/HKEDM.1996.566321

Deep level transient spectroscopy of hole emission from nitrided oxide/silicon interface traps

Department of Electrical Engineering

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

Abstract

The interface hole trap distribution in nitrided oxide (NOX), re-oxidized nitrided oxide (RNOX), and thermal oxide are studied and are compared in detail utilizing the deep level transient spectroscopy (DLTS) measurement. Results show that nitrided oxides have larger amount of hole traps than the thermal oxide. Most of the hole trapping centers in NOX layers are due to the oxygen deficiency as a result of oxygen removal during the nitridation. For RNOX sample, the amount oxygen deficiency centers are reduced by re-oxidation and the non-bridging oxygen could be a major source of hole traps. In addition, we found that the hole emissions of the trapping centers in NOX and RNOX samples also follow the lattice relaxation multiphonon emission model as used in thermal oxide.

Original language	English
Title of host publication	Proceedings 1996 IEEE Hong Kong Electron Devices Meeting
Publisher	IEEE
Pages	81-86
ISBN (Print)	0-7803-3091-9
DOIs	https://doi.org/10.1109/HKEDM.1996.566321
Publication status	Published - Jun 1996
Event	3rd IEEE Hong Kong Electron Devices Meeting - Hong Kong, China Duration: 29 Jun 1996 → 29 Jun 1996

Conference

Conference	3rd IEEE Hong Kong Electron Devices Meeting
Place	China
City	Hong Kong
Period	29/06/96 → 29/06/96

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@inproceedings{79141fadada44adb8e9b4ed3b95a6577,

title = "Deep level transient spectroscopy of hole emission from nitrided oxide/silicon interface traps",

abstract = "The interface hole trap distribution in nitrided oxide (NOX), re-oxidized nitrided oxide (RNOX), and thermal oxide are studied and are compared in detail utilizing the deep level transient spectroscopy (DLTS) measurement. Results show that nitrided oxides have larger amount of hole traps than the thermal oxide. Most of the hole trapping centers in NOX layers are due to the oxygen deficiency as a result of oxygen removal during the nitridation. For RNOX sample, the amount oxygen deficiency centers are reduced by re-oxidation and the non-bridging oxygen could be a major source of hole traps. In addition, we found that the hole emissions of the trapping centers in NOX and RNOX samples also follow the lattice relaxation multiphonon emission model as used in thermal oxide.",

author = "Poon, {Y. H.} and H. Wong and Man, {K. F.}",

year = "1996",

month = jun,

doi = "10.1109/HKEDM.1996.566321",

language = "English",

isbn = "0-7803-3091-9",

pages = "81--86",

booktitle = "Proceedings 1996 IEEE Hong Kong Electron Devices Meeting",

publisher = "IEEE",

address = "United States",

note = "3rd IEEE Hong Kong Electron Devices Meeting ; Conference date: 29-06-1996 Through 29-06-1996",

}

TY - GEN

T1 - Deep level transient spectroscopy of hole emission from nitrided oxide/silicon interface traps

AU - Poon, Y. H.

AU - Wong, H.

AU - Man, K. F.

PY - 1996/6

Y1 - 1996/6

N2 - The interface hole trap distribution in nitrided oxide (NOX), re-oxidized nitrided oxide (RNOX), and thermal oxide are studied and are compared in detail utilizing the deep level transient spectroscopy (DLTS) measurement. Results show that nitrided oxides have larger amount of hole traps than the thermal oxide. Most of the hole trapping centers in NOX layers are due to the oxygen deficiency as a result of oxygen removal during the nitridation. For RNOX sample, the amount oxygen deficiency centers are reduced by re-oxidation and the non-bridging oxygen could be a major source of hole traps. In addition, we found that the hole emissions of the trapping centers in NOX and RNOX samples also follow the lattice relaxation multiphonon emission model as used in thermal oxide.

AB - The interface hole trap distribution in nitrided oxide (NOX), re-oxidized nitrided oxide (RNOX), and thermal oxide are studied and are compared in detail utilizing the deep level transient spectroscopy (DLTS) measurement. Results show that nitrided oxides have larger amount of hole traps than the thermal oxide. Most of the hole trapping centers in NOX layers are due to the oxygen deficiency as a result of oxygen removal during the nitridation. For RNOX sample, the amount oxygen deficiency centers are reduced by re-oxidation and the non-bridging oxygen could be a major source of hole traps. In addition, we found that the hole emissions of the trapping centers in NOX and RNOX samples also follow the lattice relaxation multiphonon emission model as used in thermal oxide.

UR - http://www.scopus.com/inward/record.url?scp=0030420388&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0030420388&origin=recordpage

U2 - 10.1109/HKEDM.1996.566321

DO - 10.1109/HKEDM.1996.566321

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 0-7803-3091-9

SP - 81

EP - 86

BT - Proceedings 1996 IEEE Hong Kong Electron Devices Meeting

PB - IEEE

T2 - 3rd IEEE Hong Kong Electron Devices Meeting

Y2 - 29 June 1996 through 29 June 1996

ER -

Deep level transient spectroscopy of hole emission from nitrided oxide/silicon interface traps

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