Decoupling single nanowire mobilities limited by surface scattering and bulk impurity scattering

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • D. R. Khanal
  • A. X. Levander
  • Z. Liliental-Weber
  • W. Walukiewicz
  • J. Grandal
  • M. A. Snchez-Garca
  • E. Calleja
  • J. Wu

Detail(s)

Original languageEnglish
Article number33705
Journal / PublicationJournal of Applied Physics
Volume110
Issue number3
Publication statusPublished - 1 Aug 2011
Externally publishedYes

Abstract

We demonstrate the isolation of two free carrier scattering mechanisms as a function of radial band bending in InN nanowires via universal mobility analysis, where effective carrier mobility is measured as a function of effective electric field in a nanowire field-effect transistor. Our results show that Coulomb scattering limits effective mobility at most effective fields, while surface roughness scattering only limits mobility under very high internal electric fields. High-energy α particle irradiation is used to vary the ionized donor concentration, and the observed decrease in mobility and increase in donor concentration are compared to Hall effect results of high-quality InN thin films. Our results show that for nanowires with relatively high doping and large diameters, controlling Coulomb scattering from ionized dopants should be given precedence over surface engineering when seeking to maximize nanowire mobility. © 2011 American Institute of Physics.

Citation Format(s)

Decoupling single nanowire mobilities limited by surface scattering and bulk impurity scattering. / Khanal, D. R.; Levander, A. X.; Yu, K. M.; Liliental-Weber, Z.; Walukiewicz, W.; Grandal, J.; Snchez-Garca, M. A.; Calleja, E.; Wu, J.

In: Journal of Applied Physics, Vol. 110, No. 3, 33705, 01.08.2011.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review