Cylindrical Spoof Surface Plasmon Transmission Line Based on Via Technology

Si-Ping Gao, Yong-Xin Guo

Research output: Chapters, Conference Papers, Creative and Literary WorksRGC 32 - Refereed conference paper (with host publication)peer-review

Abstract

This paper presents a cylindrical spoof surface plasmon (C-SSP) transmission line (TL) that can be easily processed by conventional via technology. The proposed C-SSP- TL consists of one via barrel, several via pads attached to it and two annular plates at the ends of the via barrel as ground planes. Such a structure is groundless, slow wave and highly transversely- confined, leading to significant footprint miniaturization and electromagnetic compatibility enhancement. Moreover, its rotational symmetry enables its easy mating with common RF connectors without additional bulky transitions. Parametric studies reveal the SSP characteristics of C-SSP unit cell. Simulation results show the effectiveness of the proposed C-SSP- TL, which can be a promising alternative to traditional interconnects in multilayer PCBs and packages. © 2020 IEEE.
Original languageEnglish
Title of host publicationProceedings of the 2020 IEEE International Conference on Computational Electromagnetics (ICCEM 2020)
PublisherIEEE
Pages199-200
ISBN (Electronic)978-1-7281-3448-2
DOIs
Publication statusPublished - 2020
Externally publishedYes
Event6th IEEE International Conference on Computational Electromagnetics, ICCEM 2020 - Singapore, Singapore
Duration: 24 Aug 202026 Aug 2020

Publication series

NameProceedings of the IEEE International Conference on Computational Electromagnetics, ICCEM

Conference

Conference6th IEEE International Conference on Computational Electromagnetics, ICCEM 2020
PlaceSingapore
CitySingapore
Period24/08/2026/08/20

Research Keywords

  • C-SSP-T
  • Easy transition to SMA
  • Interconnec
  • Via processin

Fingerprint

Dive into the research topics of 'Cylindrical Spoof Surface Plasmon Transmission Line Based on Via Technology'. Together they form a unique fingerprint.

Cite this