Abstract
In order to remove the effect of current crowding on electromigration, thick Cu under-bump metallization has been widely adopted in the electronics industry. Three-dimensional (3-D) integrated circuits, using through Si via Cu column interconnects, is being developed, and it seems that current crowding may not be a reliability issue. However, statistical experiments and 3-D finite element simulation indicate that there is a transition from no current crowding to current crowding, caused by void growth at the cathode. An analysis of the electromigration-induced failure mechanism in solder joints having a very thick Cu layer is presented. It is a unique failure mechanism, different from that in flip chip technology. Moreover, the study of marker displacement shows two different stages of drift velocity, which clearly demonstrates the back-stress effect and the development of compressive stress. © 2011 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
| Original language | English |
|---|---|
| Pages (from-to) | 102-111 |
| Journal | Acta Materialia |
| Volume | 60 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - Jan 2012 |
| Externally published | Yes |
Bibliographical note
Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].Research Keywords
- Current crowding
- Current effect of microstructure
- Electromigration
- Soldering
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