Cu oxide nanowire array grown on Si-based SiO2 nanoscale islands via nanochannels

Y. F. Mei; G. G. Siu; Y. Yang; Ricky K.Y. Fu; T. F. Hung; Paul K. Chu; X. L. Wu

doi:10.1016/j.actamat.2004.07.010

Cu oxide nanowire array grown on Si-based SiO₂ nanoscale islands via nanochannels

Y. F. Mei, G. G. Siu, Y. Yang, Ricky K.Y. Fu, T. F. Hung, Paul K. Chu, X. L. Wu

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

16 Citations (Scopus)

Abstract

Cu oxide nanowire array on Si-based SiO₂ nanoscale islands was fabricated via nanochannels of Si-based porous anodic alumina (PAA) template at room temperature under a pulse voltage in a conventional solution for copper electrodeposition. X-ray diffraction and X-ray photoelectron spectroscopy showed that the main composite of the oxide nanowire is Cu₂O. The nanowires had a preferential growth direction (111) and connected with the nanoscale SiO₂ islands, which was confirmed by Transmission Electron Microscopy (TEM). Such Si-based nanostructure is useful in the nanoelectrics application. The growth mechanism of Cu oxide nanowires in Si-based PAA template was discussed. The formation of Cu₂O is due to the alkalinity of the anodized solution. However, the oscillations of the potential and current during the experiment trend to bring on a small amount of copper and CuO in the nanowires. © 2004 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Original language	English
Pages (from-to)	5051-5055
Journal	Acta Materialia
Volume	52
Issue number	17
DOIs	https://doi.org/10.1016/j.actamat.2004.07.010
Publication status	Published - 4 Oct 2004

Research Keywords

Chemical synthesis
Nanostructures
Semiconductor

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@article{4694537d4ef84ac99955ff2613290ac5,

title = "Cu oxide nanowire array grown on Si-based SiO2 nanoscale islands via nanochannels",

abstract = "Cu oxide nanowire array on Si-based SiO2 nanoscale islands was fabricated via nanochannels of Si-based porous anodic alumina (PAA) template at room temperature under a pulse voltage in a conventional solution for copper electrodeposition. X-ray diffraction and X-ray photoelectron spectroscopy showed that the main composite of the oxide nanowire is Cu2O. The nanowires had a preferential growth direction (111) and connected with the nanoscale SiO2 islands, which was confirmed by Transmission Electron Microscopy (TEM). Such Si-based nanostructure is useful in the nanoelectrics application. The growth mechanism of Cu oxide nanowires in Si-based PAA template was discussed. The formation of Cu2O is due to the alkalinity of the anodized solution. However, the oscillations of the potential and current during the experiment trend to bring on a small amount of copper and CuO in the nanowires. {\textcopyright} 2004 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.",

keywords = "Chemical synthesis, Nanostructures, Semiconductor",

author = "Mei, {Y. F.} and Siu, {G. G.} and Y. Yang and Fu, {Ricky K.Y.} and Hung, {T. F.} and Chu, {Paul K.} and Wu, {X. L.}",

year = "2004",

month = oct,

day = "4",

doi = "10.1016/j.actamat.2004.07.010",

language = "English",

volume = "52",

pages = "5051--5055",

journal = "Acta Materialia",

issn = "1359-6454",

publisher = "Elsevier Ltd.",

number = "17",

}

TY - JOUR

T1 - Cu oxide nanowire array grown on Si-based SiO2 nanoscale islands via nanochannels

AU - Mei, Y. F.

AU - Siu, G. G.

AU - Yang, Y.

AU - Fu, Ricky K.Y.

AU - Hung, T. F.

AU - Chu, Paul K.

AU - Wu, X. L.

PY - 2004/10/4

Y1 - 2004/10/4

N2 - Cu oxide nanowire array on Si-based SiO2 nanoscale islands was fabricated via nanochannels of Si-based porous anodic alumina (PAA) template at room temperature under a pulse voltage in a conventional solution for copper electrodeposition. X-ray diffraction and X-ray photoelectron spectroscopy showed that the main composite of the oxide nanowire is Cu2O. The nanowires had a preferential growth direction (111) and connected with the nanoscale SiO2 islands, which was confirmed by Transmission Electron Microscopy (TEM). Such Si-based nanostructure is useful in the nanoelectrics application. The growth mechanism of Cu oxide nanowires in Si-based PAA template was discussed. The formation of Cu2O is due to the alkalinity of the anodized solution. However, the oscillations of the potential and current during the experiment trend to bring on a small amount of copper and CuO in the nanowires. © 2004 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

AB - Cu oxide nanowire array on Si-based SiO2 nanoscale islands was fabricated via nanochannels of Si-based porous anodic alumina (PAA) template at room temperature under a pulse voltage in a conventional solution for copper electrodeposition. X-ray diffraction and X-ray photoelectron spectroscopy showed that the main composite of the oxide nanowire is Cu2O. The nanowires had a preferential growth direction (111) and connected with the nanoscale SiO2 islands, which was confirmed by Transmission Electron Microscopy (TEM). Such Si-based nanostructure is useful in the nanoelectrics application. The growth mechanism of Cu oxide nanowires in Si-based PAA template was discussed. The formation of Cu2O is due to the alkalinity of the anodized solution. However, the oscillations of the potential and current during the experiment trend to bring on a small amount of copper and CuO in the nanowires. © 2004 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

KW - Chemical synthesis

KW - Nanostructures

KW - Semiconductor

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UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-4544276686&origin=recordpage

U2 - 10.1016/j.actamat.2004.07.010

DO - 10.1016/j.actamat.2004.07.010

M3 - RGC 21 - Publication in refereed journal

SN - 1359-6454

VL - 52

SP - 5051

EP - 5055

JO - Acta Materialia

JF - Acta Materialia

IS - 17

ER -