Crystallographic evolution of microstructure in thin film processing: Part II. Grain boundary structure

Ronald R. Petkie; K. N. Tu; Krishna Rajan

doi:10.1007/BF02655361

Crystallographic evolution of microstructure in thin film processing: Part II. Grain boundary structure

Ronald R. Petkie
, K. N. Tu
, Krishna Rajan

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

1 Citation (Scopus)

Abstract

The technique of electron backscattered diffraction is used to charactcrize the microtexture and mesotexture of grain neighborhoods in an annealed thin film of Al₉₇Ge₃ on thermally oxidized silicon. Of the microstructural features present in this material, a "sunken" (or "collapsed") grain neighborhood is examined in terms of its mesotexture. The representation of crystallographic orientation between a "sunken" grain and its surrounding neighbors is assessed using inverse pole figures and Rodrigues-Frank (R-F) space orientation mapping. The two types of mappings are compared and detailed calculations of R-F space are shown. The advantages of the R-F space representation are illustrated. The total number of grains examined is 78 while the number of axis-angle pairs is 72. The microtexture is a strongly preferred < 111> parallel to the substrate normal while the mesotexture is comprised of low angle boundaries and fiber mesotexture as indicated by a R-F map. © 1994 The Metallurgical of Society of AIME.

Original language	English
Pages (from-to)	893-899
Journal	Journal of Electronic Materials
Volume	23
Issue number	9
DOIs	https://doi.org/10.1007/BF02655361
Publication status	Published - Sept 1994
Externally published	Yes

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Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

Research Keywords

Backscattered electrons
electron backscattered diffraction (EBSD)
grain boundary misorientation
Rodrigues-Frank (R-F) space

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@article{6f6e5b54e064426891018a06cc4823fa,

title = "Crystallographic evolution of microstructure in thin film processing: Part II. Grain boundary structure",

abstract = "The technique of electron backscattered diffraction is used to charactcrize the microtexture and mesotexture of grain neighborhoods in an annealed thin film of Al97Ge3 on thermally oxidized silicon. Of the microstructural features present in this material, a {"}sunken{"} (or {"}collapsed{"}) grain neighborhood is examined in terms of its mesotexture. The representation of crystallographic orientation between a {"}sunken{"} grain and its surrounding neighbors is assessed using inverse pole figures and Rodrigues-Frank (R-F) space orientation mapping. The two types of mappings are compared and detailed calculations of R-F space are shown. The advantages of the R-F space representation are illustrated. The total number of grains examined is 78 while the number of axis-angle pairs is 72. The microtexture is a strongly preferred < 111> parallel to the substrate normal while the mesotexture is comprised of low angle boundaries and fiber mesotexture as indicated by a R-F map. {\textcopyright} 1994 The Metallurgical of Society of AIME.",

keywords = "Backscattered electrons, electron backscattered diffraction (EBSD), grain boundary misorientation, Rodrigues-Frank (R-F) space",

author = "Petkie, \{Ronald R.\} and Tu, \{K. N.\} and Krishna Rajan",

note = "Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].",

year = "1994",

month = sep,

doi = "10.1007/BF02655361",

language = "English",

volume = "23",

pages = "893--899",

journal = "Journal of Electronic Materials",

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TY - JOUR

T1 - Crystallographic evolution of microstructure in thin film processing

T2 - Part II. Grain boundary structure

AU - Petkie, Ronald R.

AU - Tu, K. N.

AU - Rajan, Krishna

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 1994/9

Y1 - 1994/9

N2 - The technique of electron backscattered diffraction is used to charactcrize the microtexture and mesotexture of grain neighborhoods in an annealed thin film of Al97Ge3 on thermally oxidized silicon. Of the microstructural features present in this material, a "sunken" (or "collapsed") grain neighborhood is examined in terms of its mesotexture. The representation of crystallographic orientation between a "sunken" grain and its surrounding neighbors is assessed using inverse pole figures and Rodrigues-Frank (R-F) space orientation mapping. The two types of mappings are compared and detailed calculations of R-F space are shown. The advantages of the R-F space representation are illustrated. The total number of grains examined is 78 while the number of axis-angle pairs is 72. The microtexture is a strongly preferred < 111> parallel to the substrate normal while the mesotexture is comprised of low angle boundaries and fiber mesotexture as indicated by a R-F map. © 1994 The Metallurgical of Society of AIME.

AB - The technique of electron backscattered diffraction is used to charactcrize the microtexture and mesotexture of grain neighborhoods in an annealed thin film of Al97Ge3 on thermally oxidized silicon. Of the microstructural features present in this material, a "sunken" (or "collapsed") grain neighborhood is examined in terms of its mesotexture. The representation of crystallographic orientation between a "sunken" grain and its surrounding neighbors is assessed using inverse pole figures and Rodrigues-Frank (R-F) space orientation mapping. The two types of mappings are compared and detailed calculations of R-F space are shown. The advantages of the R-F space representation are illustrated. The total number of grains examined is 78 while the number of axis-angle pairs is 72. The microtexture is a strongly preferred < 111> parallel to the substrate normal while the mesotexture is comprised of low angle boundaries and fiber mesotexture as indicated by a R-F map. © 1994 The Metallurgical of Society of AIME.

KW - Backscattered electrons

KW - electron backscattered diffraction (EBSD)

KW - grain boundary misorientation

KW - Rodrigues-Frank (R-F) space

UR - https://www.scopus.com/pages/publications/0028514933

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0028514933&origin=recordpage

U2 - 10.1007/BF02655361

DO - 10.1007/BF02655361

M3 - RGC 21 - Publication in refereed journal

SN - 0361-5235

VL - 23

SP - 893

EP - 899

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 9

ER -

Crystallographic evolution of microstructure in thin film processing: Part II. Grain boundary structure

Abstract

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Research Keywords

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