Crystallographic dependence of loss in domain engineered relaxor-PT single crystals

Shujun Zhang; Nevin P. Sherlock; Richard J. Meyer; Thomas R. Shrout

doi:10.1063/1.3125431

Crystallographic dependence of loss in domain engineered relaxor-PT single crystals

Shujun Zhang, Nevin P. Sherlock, Richard J. Meyer, Thomas R. Shrout

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

77 Citations (Scopus)

Abstract

Domain engineered 〈 001 〉 oriented relaxor- PbTiO3 ferroelectric crystals exhibit high electromechanical properties and low mechanical Q values, analogous to "soft" piezoelectric ceramics. However, their characteristic low dielectric loss (0.5%) and strain-electric field hysteresis are reflective of "hard" piezoelectric materials. In this work, the electromechanical behavior of relaxor-PT crystals was investigated as a function of crystallographic orientations. It was found that the electrical and mechanical losses in crystals depends on the specific engineered domain configuration, with high Q observed for the 〈 110 〉 orientation. The high Q, together with high electromechanical coupling (∼0.9) for 〈 110 〉 oriented relaxor-PT crystals, make them promising candidates for resonant based high power transducer applications. © 2009 American Institute of Physics.

Original language	English
Article number	162906
Journal	Applied Physics Letters
Volume	94
Issue number	16
DOIs	https://doi.org/10.1063/1.3125431
Publication status	Published - 2009
Externally published	Yes

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Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to <a href="mailto:[email protected]">[email protected]</a>.

Funding

This work was supported by the ONR and NIH under Contract No. P41-RR11795.

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title = "Crystallographic dependence of loss in domain engineered relaxor-PT single crystals",

abstract = "Domain engineered 〈 001 〉 oriented relaxor- PbTiO3 ferroelectric crystals exhibit high electromechanical properties and low mechanical Q values, analogous to {"}soft{"} piezoelectric ceramics. However, their characteristic low dielectric loss (0.5%) and strain-electric field hysteresis are reflective of {"}hard{"} piezoelectric materials. In this work, the electromechanical behavior of relaxor-PT crystals was investigated as a function of crystallographic orientations. It was found that the electrical and mechanical losses in crystals depends on the specific engineered domain configuration, with high Q observed for the 〈 110 〉 orientation. The high Q, together with high electromechanical coupling (∼0.9) for 〈 110 〉 oriented relaxor-PT crystals, make them promising candidates for resonant based high power transducer applications. {\textcopyright} 2009 American Institute of Physics.",

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AU - Zhang, Shujun

AU - Sherlock, Nevin P.

AU - Meyer, Richard J.

AU - Shrout, Thomas R.

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to <a href="mailto:[email protected]">[email protected]</a>.

PY - 2009

Y1 - 2009

N2 - Domain engineered 〈 001 〉 oriented relaxor- PbTiO3 ferroelectric crystals exhibit high electromechanical properties and low mechanical Q values, analogous to "soft" piezoelectric ceramics. However, their characteristic low dielectric loss (0.5%) and strain-electric field hysteresis are reflective of "hard" piezoelectric materials. In this work, the electromechanical behavior of relaxor-PT crystals was investigated as a function of crystallographic orientations. It was found that the electrical and mechanical losses in crystals depends on the specific engineered domain configuration, with high Q observed for the 〈 110 〉 orientation. The high Q, together with high electromechanical coupling (∼0.9) for 〈 110 〉 oriented relaxor-PT crystals, make them promising candidates for resonant based high power transducer applications. © 2009 American Institute of Physics.

AB - Domain engineered 〈 001 〉 oriented relaxor- PbTiO3 ferroelectric crystals exhibit high electromechanical properties and low mechanical Q values, analogous to "soft" piezoelectric ceramics. However, their characteristic low dielectric loss (0.5%) and strain-electric field hysteresis are reflective of "hard" piezoelectric materials. In this work, the electromechanical behavior of relaxor-PT crystals was investigated as a function of crystallographic orientations. It was found that the electrical and mechanical losses in crystals depends on the specific engineered domain configuration, with high Q observed for the 〈 110 〉 orientation. The high Q, together with high electromechanical coupling (∼0.9) for 〈 110 〉 oriented relaxor-PT crystals, make them promising candidates for resonant based high power transducer applications. © 2009 American Institute of Physics.

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DO - 10.1063/1.3125431

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VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

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ER -

Crystallographic dependence of loss in domain engineered relaxor-PT single crystals

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