Crystallization-induced stress in tungsten nitride thin films
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 22_Publication in policy or professional journal
Author(s)
Detail(s)
| Original language | English |
|---|---|
| Pages (from-to) | 1941-1943 |
| Journal / Publication | Journal of Materials Science Letters |
| Volume | 19 |
| Issue number | 21 |
| Publication status | Published - Nov 2000 |
| Externally published | Yes |
Link(s)
Abstract
Direct measurement of the stress evolution is reported during reactive magnetron sputtering of WNx using a wafer curvature-based technique. It was found that the film stress changes significantly from compressive to tensile during crystallization. The nitrogen concentration in the films was determined by X-ray photoelectron spectroscopy.
Citation Format(s)
Crystallization-induced stress in tungsten nitride thin films. / Shen, Y. G.; Mai, Y. W.
In: Journal of Materials Science Letters, Vol. 19, No. 21, 11.2000, p. 1941-1943.Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 22_Publication in policy or professional journal
