Crystallization-induced stress in tungsten nitride thin films

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)22_Publication in policy or professional journal

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Original languageEnglish
Pages (from-to)1941-1943
Journal / PublicationJournal of Materials Science Letters
Volume19
Issue number21
Publication statusPublished - Nov 2000
Externally publishedYes

Abstract

Direct measurement of the stress evolution is reported during reactive magnetron sputtering of WNx using a wafer curvature-based technique. It was found that the film stress changes significantly from compressive to tensile during crystallization. The nitrogen concentration in the films was determined by X-ray photoelectron spectroscopy.