Crystallization of amorphous CoSi2 thin films I. kinetics of nucleation and growth

J. M. Liang; L. J. Chen; I. Markov; G. U. Singco; L. T. Shi; C. Farrell; K. N. Tu

doi:10.1016/0254-0584(94)90199-6

Crystallization of amorphous CoSi₂ thin films I. kinetics of nucleation and growth

J. M. Liang
, L. J. Chen
, I. Markov
, G. U. Singco
, L. T. Shi
, C. Farrell
, K. N. Tu

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

6 Citations (Scopus)

Abstract

The kinetics of nucleation and growth of spherulites in amorphous CoSi₂ thin films of 100 nm of thickness have been studied in situ by transmission electron microscopy. The time dependence of the number of nuclei showed pronounced transient character. The growth rate was found to be constant upon isothermal annealing in the temperature range of 130 to 170 °Cin a broad interval of time. The activation energy of incorporation of growth units into the crystal lattice was found to be 23.9 kcal/mole. For the surface free energy between the crystallites and the amorphous phase the value 212 erg/cm² has been determined from the nucleation experiments. The nucleation was found to occur randomly in the bulk of the amorphous film with a constant rate during the transformation process as deduced from the average value n = 3.8 in the Avrami kinetic law for overall crystallization ξ = 1-exp(-ktⁿ). © 1994 Published by Elsevier B.V.

Original language	English
Pages (from-to)	250-257
Journal	Materials Chemistry and Physics
Volume	38
Issue number	3
DOIs	https://doi.org/10.1016/0254-0584(94)90199-6
Publication status	Published - Aug 1994
Externally published	Yes

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@article{afebf189976742078a0290ab2bc7e8f5,

title = "Crystallization of amorphous CoSi2 thin films I. kinetics of nucleation and growth",

abstract = "The kinetics of nucleation and growth of spherulites in amorphous CoSi2 thin films of 100 nm of thickness have been studied in situ by transmission electron microscopy. The time dependence of the number of nuclei showed pronounced transient character. The growth rate was found to be constant upon isothermal annealing in the temperature range of 130 to 170 °Cin a broad interval of time. The activation energy of incorporation of growth units into the crystal lattice was found to be 23.9 kcal/mole. For the surface free energy between the crystallites and the amorphous phase the value 212 erg/cm2 has been determined from the nucleation experiments. The nucleation was found to occur randomly in the bulk of the amorphous film with a constant rate during the transformation process as deduced from the average value n = 3.8 in the Avrami kinetic law for overall crystallization ξ = 1-exp(-ktn). {\textcopyright} 1994 Published by Elsevier B.V.",

author = "Liang, \{J. M.\} and Chen, \{L. J.\} and I. Markov and Singco, \{G. U.\} and Shi, \{L. T.\} and C. Farrell and Tu, \{K. N.\}",

note = "Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].",

year = "1994",

month = aug,

doi = "10.1016/0254-0584(94)90199-6",

language = "English",

volume = "38",

pages = "250--257",

journal = "Materials Chemistry and Physics",

issn = "0254-0584",

publisher = "Elsevier B.V.",

number = "3",

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TY - JOUR

T1 - Crystallization of amorphous CoSi2 thin films I. kinetics of nucleation and growth

AU - Liang, J. M.

AU - Chen, L. J.

AU - Markov, I.

AU - Singco, G. U.

AU - Shi, L. T.

AU - Farrell, C.

AU - Tu, K. N.

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 1994/8

Y1 - 1994/8

N2 - The kinetics of nucleation and growth of spherulites in amorphous CoSi2 thin films of 100 nm of thickness have been studied in situ by transmission electron microscopy. The time dependence of the number of nuclei showed pronounced transient character. The growth rate was found to be constant upon isothermal annealing in the temperature range of 130 to 170 °Cin a broad interval of time. The activation energy of incorporation of growth units into the crystal lattice was found to be 23.9 kcal/mole. For the surface free energy between the crystallites and the amorphous phase the value 212 erg/cm2 has been determined from the nucleation experiments. The nucleation was found to occur randomly in the bulk of the amorphous film with a constant rate during the transformation process as deduced from the average value n = 3.8 in the Avrami kinetic law for overall crystallization ξ = 1-exp(-ktn). © 1994 Published by Elsevier B.V.

AB - The kinetics of nucleation and growth of spherulites in amorphous CoSi2 thin films of 100 nm of thickness have been studied in situ by transmission electron microscopy. The time dependence of the number of nuclei showed pronounced transient character. The growth rate was found to be constant upon isothermal annealing in the temperature range of 130 to 170 °Cin a broad interval of time. The activation energy of incorporation of growth units into the crystal lattice was found to be 23.9 kcal/mole. For the surface free energy between the crystallites and the amorphous phase the value 212 erg/cm2 has been determined from the nucleation experiments. The nucleation was found to occur randomly in the bulk of the amorphous film with a constant rate during the transformation process as deduced from the average value n = 3.8 in the Avrami kinetic law for overall crystallization ξ = 1-exp(-ktn). © 1994 Published by Elsevier B.V.

UR - https://www.scopus.com/pages/publications/0028482933

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0028482933&origin=recordpage

U2 - 10.1016/0254-0584(94)90199-6

DO - 10.1016/0254-0584(94)90199-6

M3 - RGC 21 - Publication in refereed journal

SN - 0254-0584

VL - 38

SP - 250

EP - 257

JO - Materials Chemistry and Physics

JF - Materials Chemistry and Physics

IS - 3

ER -