Crystallization kinetics of amorphous NiSix films

R. D. Thompson; J. Angilello; K. N. Tu

doi:10.1016/0040-6090(90)90288-O

Crystallization kinetics of amorphous NiSi_x films

R. D. Thompson
, J. Angilello
, K. N. Tu

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

7 Citations (Scopus)

Abstract

In situ resistivity measurements have been used to determine the kinetics of crystal growth of co-evaporated NiSi_x films. Samples with various heat treatments have been examined with X-ray diffaction to determine the phases growing. It is found that all the films contain crystallites as deposited and that NiSi₂ or Ni₂Si grow in most of them. The variations in activation energy and the "mode of transformation" with composition are explained. © 1990.

Original language	English
Pages (from-to)	259-265
Journal	Thin Solid Films
Volume	188
Issue number	2
DOIs	https://doi.org/10.1016/0040-6090(90)90288-O
Publication status	Published - 15 Jul 1990
Externally published	Yes

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Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

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abstract = "In situ resistivity measurements have been used to determine the kinetics of crystal growth of co-evaporated NiSix films. Samples with various heat treatments have been examined with X-ray diffaction to determine the phases growing. It is found that all the films contain crystallites as deposited and that NiSi2 or Ni2Si grow in most of them. The variations in activation energy and the {"}mode of transformation{"} with composition are explained. {\textcopyright} 1990.",

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AU - Angilello, J.

AU - Tu, K. N.

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N2 - In situ resistivity measurements have been used to determine the kinetics of crystal growth of co-evaporated NiSix films. Samples with various heat treatments have been examined with X-ray diffaction to determine the phases growing. It is found that all the films contain crystallites as deposited and that NiSi2 or Ni2Si grow in most of them. The variations in activation energy and the "mode of transformation" with composition are explained. © 1990.

AB - In situ resistivity measurements have been used to determine the kinetics of crystal growth of co-evaporated NiSix films. Samples with various heat treatments have been examined with X-ray diffaction to determine the phases growing. It is found that all the films contain crystallites as deposited and that NiSi2 or Ni2Si grow in most of them. The variations in activation energy and the "mode of transformation" with composition are explained. © 1990.

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U2 - 10.1016/0040-6090(90)90288-O

DO - 10.1016/0040-6090(90)90288-O

M3 - RGC 21 - Publication in refereed journal

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SP - 259

EP - 265

JO - Thin Solid Films

JF - Thin Solid Films

IS - 2

ER -